Information processing system including semiconductor device having self-refresh mode

ABSTRACT

A method for controlling termination impedance of a data terminal in a dynamic random access memory device includes receiving a mode register set command to set an operation mode to a first mode, setting the operation mode in a mode register to the first mode, receiving a self-refresh entry command, entering self-refresh mode, activating a first input buffer connected to a termination impedance control terminal, and receiving an impedance control signal at the first buffer, wherein the termination impedance of the data terminal is set to a first impedance value if the termination impedance control signal has a first level and the termination impedance of the data terminal is set to a second impedance value if the termination impedance control signal has a second level.

The present application is a Continuation Application of U.S. patentapplication Ser. No. 13/559,439 filed on Jul. 26, 2012, which is basedon and claims priority from Japanese Patent Application No. 2011-165714,filed on Jul. 28, 2011, the entire contents of which are incorporatedherein by reference.

BACKGROUND OF THE INVENTION

1. Field of the Invention

The present invention relates to an information Processing system and acontrol method thereof, and more particularly to an informationprocessing system including a semiconductor device with a self-refreshmode and a control method thereof. The present invention also relates toa control method of a controller, and more particularly to a controllerthat controls a semiconductor device with a self-refresh mode and acontrol method thereof.

2. Description of Related Art

An operation mode called a self-refresh mode is provided for the DRAM.The self-refresh mode is a kind of standby mode in which refresh ofstorage data included in storage cells is periodically performed insideof the DRAM in asynchronism with outside. A controller can stop issuanceof many external signals such as an external clock signal and a commandsignal to be supplied to the semiconductor device, during a period whenthe semiconductor device has entered the self-refresh mode. During theperiod when the semiconductor device has entered the self-refresh mode,an input first-stage circuit such as a clock receiver included in theDRAM to receive a signal supplied from outside is inactivated andoperations of circuit blocks such as the DLL, circuit are also stopped.Accordingly, when the semiconductor device has entered the self-refreshmode, entire power consumption of the system becomes quite low.Furthermore, the refresh operation is periodically performed inside ofthe DRAM, so that the storage data are not lost.

On the other hand, the DRAM often has a function called ODT (On DieTermination). The ODT function enables a data terminal included in theDRAM to be used as a termination resistor. When the DRAM with the ODTfunction is used, signal quality of read data and write data can beenhanced without using an external termination resistor outside of thesemiconductor device. For example, the ODT function is dynamicallycontrolled by an impedance control signal issued from a controller.

However, because the impedance control signal is introduced inside ofthe DRAM in synchronism with an external clock signal, there is aproblem that the impedance control signal cannot be used during a periodwhen the semiconductor device has entered a self-refresh mode in whichan input first-stage circuit such as a clock receiver is inactivated.Japanese Patent Application Laid-open No. 2001-332086 describes a DRAMthat continuously receives an external clock signal even during a periodwhen a semiconductor device has entered a self-refresh mode.

When having entered the self-refresh mode, the controller cannot use theODT function. When data terminals of two semiconductor devices areconnected with each other and one of the semiconductor devices is set tothe self-refresh mode, data cannot be read from or write into the othersemiconductor device. Therefore, the controller has no alternative butto enter a power-down mode in which the ODT function can be used;however, power consumption is higher in the power-down mode than in theself-refresh mode.

As to how the DRAM described in Japanese Patent Application Laid-openNo. 2001-332086 handles an impedance control signal during a period whenthe semiconductor device has entered the self-refresh mode isunexplained. Furthermore, because a clock receiver is always activatedin the DRAM described in Japanese Patent Application Laid-open No.2001-332086, power consumption of the clock receiver cannot be reducedeven when the semiconductor device enters the self-refresh mode.

This problem occurs not only in the DRAM but also in all semiconductordevices with the ODT function or the self-refresh mode. For example,there is the same problem also in a nonvolatile memory, a controllerthereof, and a system, which are required to operate at high frequency.Further, there is the same problem also in a semiconductor device thatin apart includes nonvolatile memory cells having a problem of cell dataretention.

SUMMARY

In one embodiment, there is provided a semiconductor device thatincludes: a first input buffer circuit to which an external clock signalhaving a predetermined frequency is supplied from outside; a DLL circuitthat generates an internal clock signal that is phase-controlled basedon an output signal from the first input buffer circuit; a memory cellarray that has a plurality of memory cells requiring an refreshoperation in order to retain of storage data therein; an output buffercircuit that outputs the storage data read from the memory cell array tooutside through a data terminal synchronously with the internal clocksignal; a second input buffer circuit supplied with an impedance controlcommand from outside; and an access control circuit. The access controlcircuit enters a self-refresh mode in which the refresh operation isperformed in response to a self-refresh command, performs the refreshoperation in response to an auto-refresh command, exits the self-refreshmode in response to a self-refresh exit command, and controls animpedance of the data terminal in response to the impedance controlcommand during the self-refresh mode.

In another embodiment, there is provided a controller that includes: acommand issuing unit that issues commands to a semiconductor devicehaving a self-refresh mode in which a refresh operation of storage datain memory cell array is performed; and a data processor that processesthe storage data transmitted to or received from the semiconductordevice through a data terminal included therein. The command issuingunit includes: an impedance control command issuing unit that issues animpedance control command to control an impedance of the data terminal;and a sub-command issuing unit that issues a self-refresh command thatcauses the semiconductor device to enter the self-refresh mode, aself-refresh exit command that causes the semiconductor device to exitthe self-refresh mode, and an auto-refresh command that causes thesemiconductor device to perform the refresh operation. The impedancecontrol command issuing unit issues the impedance control command to thesemiconductor device while the semiconductor device is in theself-refresh mode so that the semiconductor device controls an impedanceof the data terminal during the self-refresh mode.

In still another embodiment, there is provided an information processingsystem that includes: a first device including a memory cell array thatholds storage data and a data terminal through which the storage data isoutput, the first device performing a refresh operation of the storagedata in a self-refresh mode and an auto-refresh mode; and a seconddevice issuing a self-refresh command that causes the first device toenter the self-refresh mode, a self-refresh exit command that causes thefirst device to exit the self-refresh mode, an auto-refresh command thatcauses the first device to enter the auto-refresh mode, and an impedancecontrol command to control an impedance of the data terminal. The seconddevice issues the impedance control command to the first device whilethe first device is in the self-refresh mode. The first device controlsan impedance of the data terminal in response to the impedance controlcommand.

Instill another embodiment, there is provided a control method of aninformation processing system having a controller and a semiconductordevice. The method includes: issuing, from the controller to thesemiconductor device, a self-refresh command, a self-refresh exitcommand, an auto-refresh command, and an impedance control command;entering a self-refresh mode in which a refresh operation on memorycells included in a memory cell array of the semiconductor device isperformed in response to the self-refresh command; exiting theself-refresh mode in response to the self-refresh exit command;performing a refresh operation on the memory cells in response to theauto-refresh command; and controlling an impedance of a data terminalthrough which storage data in the memory cell array is output. Thecontroller issues the impedance control command to the semiconductordevice while the semiconductor device is in the self-refresh mode.

In still another embodiment, there is provided a control method of acontroller, the method including: issuing a self-refresh command thatcauses a semiconductor device to enter a self-refresh mode in which arefresh operation on memory cells included in a memory cell array of thesemiconductor device is performed; issuing a self-refresh exit commandthat causes the semiconductor device to exit the self-refresh mode;issuing an auto-refresh command that causes the semiconductor device toperform the refresh operation on the memory cells; and issuing animpedance control command to control an impedance of a data terminal ofthe semiconductor device through which storage data in the memory cellarray is output while the semiconductor device is in the self-refreshmode.

According to the present invention, an impedance of the data terminalcan be controlled in response to the impedance control command even inthe self-refresh mode.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a schematic diagram for explaining an embodiment of thepresent invention;

FIG. 2 is a block diagram indicative of an embodiment of a generalconfiguration of a semiconductor device 10 according to a preferredembodiment of the present invention;

FIG. 3 is a block diagram indicative of an embodiment of main circuitblocks included in an access control circuit 20 and shows a firstembodiment of the present invention;

FIG. 4 is a list of commands indicated by command signals CMD and aclock enable signal CKE;

FIG. 5 is a circuit diagram indicative of an embodiment of an GDT latchcircuit 82;

FIG. 6 is a main circuit: diagram indicative of an embodiment of aself-refresh control circuit 100 shown in FIG. 3;

FIG. 7 is a block diagram indicative of an embodiment of a configurationof a DLL circuit 200;

FIG. 8 is a timing chart for explaining an operation of the accesscontrol circuit 20 shown in FIG. 3;

FIG. 9 is another timing chart for explaining an operation of the accesscontrol circuit 20 shown in FIG. 3;

FIG. 10 is another block diagram indicative of an embodiment of maincircuit blocks included in an access control circuit 20 and shows a casewhere an information processing system operates in a first operationmode complying with the DRAM standards;

FIG. 11 is a timing chart for explaining an operation of the accesscontrol circuit 20 in the first operation mode;

FIG. 12 is a block diagram indicative of an embodiment of main circuitblocks included in an access control circuit 20 a according to a secondembodiment;

FIG. 13A is a circuit diagram indicative of an embodiment of anauto-refresh counter 91;

FIG. 13B is a circuit diagram indicative of an embodiment of aself-refresh counter 92;

FIG. 14 is a timing chart for explaining an operation of the accesscontrol circuit 20 a shown in FIG. 12;

FIG. 15 is a block diagram indicative of an embodiment of main circuitblocks included in an access control circuit 20 h according to a thirdembodiment;

FIG. 16 is a main circuit diagram indicative of an embodiment of aself-refresh control circuit 100 b shown in FIG. 15;

FIG. 17 is a timing chart for explaining an operation of the accesscontrol circuit 20 b shown in FIG. 15;

FIG. 18 is a main circuit diagram indicative of an embodiment of aself-refresh control circuit 100 c included in an access control circuitaccording to a fourth embodiment;

FIG. 19 is a timing chart for explaining an operation of the accesscontrol circuit according to the fourth embodiment;

FIG. 20 is a timing chart for explaining advantages according to thefourth embodiment;

FIG. 21 is another timing chart for explaining an operation of theaccess control circuit according to the fourth embodiment;

FIG. 22 is a block diagram indicative of a first preferred embodiment ofan information processing system according to the present invention;

FIG. 23 is a block diagram indicative of a second preferred embodimentof an information processing system according to the present invention;

FIG. 24 is a schematic cross-sectional view for explaining aconfiguration of a dual-die package DDP, which is a package having twosemiconductor devices 10 a and 10 b;

FIG. 25 is a schematic plan view showing an example of a layout of theexternal terminals 303 provided on the dual-die package DDP;

FIG. 26 is a block diagram indicative of the third embodiment of aninformation processing system according to the present invention; and

FIGS. 27A to 27D are tables for explaining impedance controls forrespective ranks, in which FIG. 27A shows a case where a write operationis performed for the DIMM 401, FIG. 27B shows a case where a writeoperation is performed for the DIMM 402, FIG. 27C shows a case where aread operation is performed for the DIMM 401, and FIG. 27D shows a casewhere a read operation is performed for the DIMM 402.

DETAILED DESCRIPTION OF THE EMBODIMENTS

A representative embodiment of a technical concept for solving theproblem of the present invention is described below. It is needless tomention that the contents that the present application is to claim forpatent are not limited to the following technical concept, but to thedescription of the appended claims. That is, according to the presentinvention, a controller issues an impedance control signal forcontrolling an impedance of a data terminal even in a self-refresh modeand a semiconductor device always activates an input buffer circuit thatreceives the impedance control signal even in the self-refresh mode. Thepresent invention has a technical concept of bypassing a latch circuitthat latches the impedance control signal in synchronism with a clocksignal in the self-refresh mode, for example. Accordingly, the impedancecontrol signal can be input in the self-refresh mode without using theclock signal. That is, according to the present invention, the impedanceof the data terminal can be controlled while an auto-refresh command isPerformed (auto-refresh mode) and an impedance of the data terminal canbe controlled also in the sel f-refresh mode. The auto-refresh and theself-refresh of the present application are the same in that refresh ofstorage data is performed and are different in power consumption andspecifications of interface during refresh. The consumption current inthe self-refresh is lower than that in the auto-refresh. This is becausethe controller stops an external clock as a synchronization signal (asystem clock of a memory bus, also referred to as an externalsynchronization signal), during a large part of a self-refresh period.In the semiconductor device, more clock buffers (input buffer circuits)that communicate with outside can be inactivated at the time ofself-refresh, so that power of internal circuits not related to refreshin the semiconductor device can be controlled to be smallest. From theviewpoint of interface, impedance controls of the data terminal throughwhich data are output are different, for example. The impedance controlis performed in asynchronism with the external clock signal during theself-refresh and the impedance control is performed in synchronism withthe external clock signal during the auto-refresh. Accordingly, theconsumption current during the self-refresh is lower than that duringthe auto-refresh at least by power consumption of the clock receiverthat receives the external clock signal.

Referring now to FIG. 1, it shows an information processing systemincluding a controller 50 and a semiconductor device 10. Thesemiconductor device 10 includes a command terminal 22, a clock terminal23, an impedance control terminal 26, and a data terminal 31, which areconnected to a command terminal 61, a clock terminal 62, an impedancecontrol terminal 60, and a data terminal 63 included in the controller50, respectively. The command terminal 22 includes a chip selectterminal 28 which will be explained later. The controller 50 includes acommand issuing unit 51 that issues a command CMD, a clock issuing unit52 that issues an external clock signal OK, and a data processor 53 thatprocesses storage data DQ. The command terminal 22 includes a pluralityof control pins (not shown), and plural commands (first and secondcommands, for example), which will be explained later, are defined bycorresponding logical combinations of plural control signals. Thecommand issuing unit 51 includes a sub-command issuing unit 51 a and animpedance control signal issuing unit 51 b. The sub-command issuing unit51 a is a circuit block that generates various commands and theimpedance control signal issuing unit 51 b is a circuit block thatgenerates an impedance control signal ODT. In the present invention, anexternal clock signal having a predetermined frequency is also referredto as “synchronization signal” or “external synchronization signal”. Thecontroller 50 does not need to be configured with one chip and, forexample, the clock issuing unit 52 and the other units can be configuredwith separate chips.

The command CMD issued by the controller 50 includes a self-refreshcommand SRE for entering the self-refresh mode, a self-refresh exitcommand SRX for exiting the self-refresh mode and the like, in additionto a row command and a column command.

The row command causes the access control circuit 20 to perform anaccess to the memory cell array 11 based on a row address andcorresponds to an active command ACT, an auto-refresh command REF andthe like. In the present invention, these commands are also referred toas “first commands”. On the other hand, the column command causes theaccess control circuit 20 to control a state of the data terminal 31based on a column address and corresponds to a read command RD, a writecommand WT and the like. As shown in FIG. 2 explained later, when theread command RD is issued, data in an amplifier circuit 15 is output tooutside through the data terminal 31. When the write command WT isissued, data supplied from outside is supplied to the amplifier circuit15 through the data terminal 31. Although not relevant to the columnaddress, an impedance control signal ODT used by the access controlcircuit 20 to control an impedance of the data terminal 31 also belongsto the column command. Among these commands, the read command RD and theimpedance control signal ODT are commands for controlling a state of thedata terminal 31 in synchronism with the internal clock signal ICLK1 andthese commands are also referred to as “second commands” in the presentinvention.

The semiconductor device 10 includes a memory cell array 11 that holdsstorage data, an output buffer circuit 30 a that outputs the storagedata read from the memory cell array 11, in synchronism with an internalclock signal ICLK1, and an access control circuit 20 that performs anaccess to the memory cell array 11. The access control circuit 20includes a self-refresh control circuit 100, a latch circuit 84, and aselector 85. The self-refresh control circuit 100 inactivates an enablesignal CKen during a period when the semiconductor device has enteredthe self-refresh mode, thereby bringing input buffer circuits 70 and 71into an inactive state. The input buffer circuit 70 is a buffer circuitto which a command signal CMD is input, and the input buffer circuit 71is a buffer circuit to which an external clock signal CK is input. Inthe present invention, the input buffer circuit 71 is also referred toas “first input buffer circuit”. An input buffer circuit 72 to which animpedance control signal ODT is input is kept in an active state withoutbeing inactivated even when the semiconductor device has entered theself-refresh mode. In the present invention, the input buffer circuit 72is also referred to as “second input buffer circuit”.

An impedance control signal IODT0 received by the input buffer circuit72 is supplied to the latch circuit 84 and the selector 85. The latchcircuit 84 latches the impedance control signal IODT0 in synchronismwith an internal clock signal ICLK0 received by the input buffer circuit71. The selector 85 is a circuit that selects either the impedancecontrol signal IODT0 latched by the latch circuit 84 or the impedancecontrol signal IODT0 having bypassed the latch circuit 84. Selection isdetermined according to a self-state signal SS output from theself-refresh control circuit 100. The self-state signal SS is activatedduring a period when the semiconductor device has entered theself-refresh mode, and the selector 85 selects the impedance controlsignal IODT0 having bypassed the latch circuit 84 when the self-statesignal SS is in an active state. When the self-state signal SS is aninactive state, the selector 85 selects the impedance control signalIODT0 latched by the latch circuit 84.

An impedance control signal IODT1 output from the selector 85 issupplied to the output buffer circuit 30 a. This causes the outputbuffer circuit 30 a to change an impedance of the data terminal 31 basedon the impedance control signal IODT1. As a result, when the impedancecontrol signal ODT is issued while the semiconductor device has notentered the self-refresh mode, the impedance of the data terminal 31changes in synchronism with the external clock signal CK. On the otherhand, when the impedance control signal ODT is issued while thesemiconductor device has entered the self-refresh mode, the impedance ofthe data terminal 31 changes in asynchronism with the external clocksignal CK. Therefore, an impedance control of the data terminal 31 canbe executed without issuing the external clock signal CK from thecontroller 50 during the self-refresh mode.

Preferred embodiments of the present invention will be explained belowin detail with reference to the accompanying drawings.

Turning to FIG. 2, the semiconductor device 10 according to the presentembodiment is a DRAM and includes the memory cell array 11. Thesemiconductor device 10 is mainly constituted by an N-channel transistorand a P-channel transistor. In the memory cell array 11, a plurality ofword lines WL and a plurality of bit lines BL intersecting with eachother are provided and a plurality of memory cells MC are arranged atintersections thereof, respectively. Selection of a word line ML isperformed by a row decoder 12 and selection of a bit line BL isperformed by a column decoder 13. The bit lines BL are connected tocorresponding sense amplifiers SA in a sense circuit 14, respectively,and a bit line BL selected by the column decoder 13 is connected to theamplifier circuit 15 through the corresponding sense amplifier SA. Asexplained later, the memory cell array 11 is divided into eight banks.

Operations of the row decoder 12, the column decoder 13, the sensecircuit 14, and the amplifier circuit 15 are controlled by the accesscontrol circuit 20. An address signal ADD, the command signal CMD,external clock signals CK and CKB, a clock enable signal CKE, theimpedance control signal ODT, and a chip select signal CS are suppliedto the access control circuit 20. These signals are input from outsidethrough corresponding terminals 21 to 26 and 28. The external clocksignals CK and CKB are synchronization signals complementary to eachother. The chip select signal CS is used by the controller 50 to selectthe semiconductor device (the access control circuit 20). The accesscontrol circuit 20 controls the row decoder 12, the column decoder 13,the sense circuit 14, the amplifier circuit 15, and a data input/outputcircuit 30 based on these signals.

Specifically, when the command signal CMD indicates the active commandACT, the address signal ADD is supplied to the row decoder 12. Inresponse thereto, the row decoder 12 selects a word line WL indicated bythe address signal ADD and accordingly corresponding memory cells MC areconnected to the corresponding bit lines BL, respectively. The accesscontrol circuit 20 then activates the sense circuit 14 in apredetermined timing. This operation is also referred to as “access tostorage data” and a command for performing this operation is alsoreferred to as “first command”.

When the command signal CMD indicates the read command RD or the writecommand WT, the address signal ADD is supplied to the column decoder 13.In response thereto, the column decoder 13 connects a bit line DLindicated by the address signal ADD to the amplifier circuit 15.Accordingly, at the time of a read operation, read data DQ that are readfrom the memory cell array 11 through the corresponding sense amplifierSA are output to outside from the data terminal 31 through the amplifiercircuit 15 and the data input/output circuit 30. At the time of a writeoperation, write data DQ that are supplied from outside through the dataterminal 31 and the data input/output circuit 30 are written into thecorresponding memory cells MC through the amplifier circuit and thesense amplifier SA. This operation is also referred to as “output ofstorage data” and a command for performing this operation is alsoreferred to as “second command”.

When the command signal CMD indicates the auto-refresh command REF, theaccess control circuit 20 supplies a count value (refresh address) of arefresh counter (not shown) to the row decoder 12. In response thereto,the row decoder 12 selects a word line WL indicated by the refreshaddress and accordingly memory cells MC connected to the selected wordline WL are refreshed by the sense amplifiers SA. This operation is alsoreferred to as “access to storage data” and a command for performingthis operation is also referred to as “first command”.

Furthermore, when the command signal CMD indicates the self-refreshcommand SRE, a self-refresh control circuit 100 included in the accesscontrol circuit 20 starts to cause the semiconductor device 10 to enterthe self-refresh mode. When the command signal CMD indicates theself-refresh exit command SRX, the semiconductor device 10 exits theself-refresh mode.

As shown in FIG. 2, the access control circuit 20 includes the DLLcircuit 200. The DLL circuit 200 receives the external clock signals CKand CKB and generates the internal clock signal ICLK1 phase-controlled,based on the received signal. The DLL circuit 200 includes a delaycircuit (corresponding to reference numeral 210 in FIG. 7) that delaysthe external clock signals CK and CKB, a delay adjusting circuit(corresponding to 220 and 250 in FIG. 67) that adjusts a delay amount ofthe delay circuit, and a phase comparing circuit (corresponding to 240in FIG. 7) that compares phases of the internal clock signal ICLK1output from the delay circuit and the external clock signals CK and CKB,and supplies a result of the comparison to the delay circuit. Theinternal clock signal ICLK1 is supplied to the output buffer circuit 30a included in the data input/output circuit 30 and accordingly read dataDQ that are read from the memory cell array 11 are output from the dataterminal 31 in synchronism with the internal clock signal ICLK1. Animpedance control signal IODT1 is also supplied to the data input/outputcircuit 30. When the impedance control signal IODT1 is activated, theoutput buffer circuit 30 a is brought into a predetermined state andaccordingly the data terminal 31 is controlled to have a predeterminedimpedance. This operation is also referred to as “control of animpedance of the data terminal” and a command for performing thisoperation is also referred to as “second command”.

When the semiconductor device 10 enters the self-refresh mode, the DLLcircuit 200 is inactivated and power consumption is reduced. When theDLL circuit 200 is inactivated, update information that is held untilthen is discarded. This is because it is preferable that the DLL circuit200 performs a cold start in conjunction with issuance of theself-refresh exit command SRX without referring to previous updateinformation when the controller changes a frequency of the externalclock signal CK during the self-refresh mode. The DLL circuit 200 isbrought into a locked state by plural times of updating. The updateinformation and lock will be explained later. During a period when thesemiconductor device 10 has entered the self-refresh mode, the clockissuing unit 52 included in the controller 50 in principle stopsissuance of the external clock signal CK. Stop means that the externalclock signal CK keeps a high or low state without oscillating, or has ahigh impedance. When the self-refresh exit command SRX is issued, theDLL circuit 200 is temporarily activated and phase states of theexternal clock signal CK and the internal clock signal ICLK1 in thesemiconductor device are updated. At that time, the DLL circuit 200 isnot reset and the update information is maintained. Therefore, only aprevious state is updated (a subsequent update value is determined basedon a previous update value). Accordingly, a time required for the DLLcircuit 200 to be locked (for the phases of the external clock signal CKand the internal clock signal ICLK1 in the semiconductor device to bealmost matched with each other) after the DLL circuit 200 is activatedin response to issuance of the self-refresh exit command SRX is quiteshort. During a period when the DLL circuit 200 is activated, theexternal clock signal CK is issued from the clock issuing unit 52included in the controller 50. That is, the external clock signal CK isissued from the clock issuing unit 52 only corresponding to a periodwhen the DLL circuit 200 is activated.

These circuit blocks use predetermined internal voltages as operatingpower. These internal voltages are generated by a power-supply circuit40 shown in FIG. 2. The power-supply circuit 40 receives an externalpotential VDD and a ground potential VSS supplied through power-supplyterminals 41 and 42, respectively, and generates internal voltages VPP,VPERI, VARY and the like based on these potentials. The internal voltageVPP is generated by increasing the external potential VDD and theinternal voltages VPERI and VARY are generated by decreasing theexternal potential VDD. The power-supply circuit 40 also generates anegative voltage (not shown).

The internal voltage VPP is mainly used by the row decoder 12. The rowdecoder 12 drives a word line WL selected based on the address signalADD to a VPP level, thereby bringing cell transistors included in thememory cells MC into conduction. The internal voltage VARY is mainlyused by the sense circuit 14. When activated, the sense circuit 14drives one of paired bit lines to a VARY level and the other bit line toa VSS level, thereby amplifying read data that have been read. Theinternal voltage VPERI is used as an operating voltage for most ofperipheral circuits such as the access control circuit 20. Powerconsumption of the semiconductor device 10 is reduced by using theinternal voltage VPERI lower than the external voltage VDD as theoperating voltage for these peripheral circuits.

Turning to FIG. 3, the access control circuit 20 includes input buffercircuits 71 to 73. The input buffer circuit 71 receives the externalclock signals CK and CKB and generates the internal clock signal ICLK0,and is also referred to as “first input buffer circuit” in the presentinvention. The input buffer circuit 72 receives the impedance controlsignal CDT and generates an impedance control signal IODT0, and is alsoreferred to as “second input buffer circuit” in the present invention.The input buffer circuit 73 receives the clock enable signal CKE andgenerates a clock enable signal ICKE0, and is also referred to as “thirdinput buffer circuit” in the present invention. The input buffer circuit71 is activated or inactivated according to an enable signal CKen. Theinput buffer circuit 71 is activated when the enable signal CKen ishigh. On the other hand, the input buffer circuits 72 and 73 are alwaysactivated. This is because, in the first embodiment, the impedancecontrol signal ODT is issued also while the semiconductor device hasentered the self-refresh mode and thus the input buffer circuit 72 needsto be activated. Further, because the self-refresh exit command SRX isindicated by the clock enable signal CKE and thus the input buffercircuit 73 needs to be activated also in the self-refresh mode. Theself-refresh command SRE is indicated by the command CMD input throughthe command terminal 22 and the clock enable signal CKE input throughthe clock enable terminal 25.

Turning to FIG. 4, each command is represented by a combination of thecommand signals CMD and a logic level of the clock enable signal CKE. InFIG. 4, “H” denotes a high level, “L” denotes a low level, and “−”denotes “Don't care”. Furthermore, “CSB”, “RASH”, “CASH”, and “WEB”denote a chip select signal, a row-address strobe signal, acolumn-address strobe signal, and a write enable signal, respectively.These signals CSB, RASH, CASB, and WEB are signals constituting thecommand signals CMD.

Specifically, when the signals CSB, RASH, and CASH are set to a lowlevel (L) and the signal WEB is set to a high level (H) with the clockenable signal CKE kept at a high level (H), this is handled as theauto-refresh command REF. When the clock enable signal CKE is changedfrom the high level (H) to a low level (L) with the signals CSB, RASH,and CASH set at the low level (L) and the signal WEB set at the highlevel (H), this is handled as the self-refresh command SRE. When theclock enable signal CKE is changed from the high level (H) to the lowlevel (L) with the signal CSB set at the low level (L) and the signalsRASH, CASH, and WEB set at the high level (H), this is handled as apower-down command PDE. When the clock enable signal CKE is changed fromthe low level (L) to the high level (H) with the signal CSB set at thehigh level (H), this is handled as the self-refresh exit command SRX ora power-down exit command PDX.

The internal clock signal ICLK0 output from the input buffer circuit 71is supplied to the DLL circuit 200. The DLL circuit 200 generates theinternal clock signal ICLK1 phase-controlled, based on the internalclock signal ICLK0. Operation states of the DLL circuit 200 include afirst active state, a second active state, and an inactive state,details of which will be explained later.

The first active state is an operation state where the delay circuit,the delay adjusting circuit, and the phase comparing circuit are activeand thus the internal clock signal ICLK1 phase-controlled iscontinuously generated, and the DLL circuit 200 is brought into thisoperation state when a read command and the impedance control signal ODTare issued. Therefore, the internal clock signal ICLK1 generated in thefirst active state is supplied to the output buffer circuit 30 a shownin FIG. 2. The second active state is an operation state where theinternal clock signal ICLK1 phase-controlled is generated at apredetermined time interval, and the delay circuit, the delay adjustingcircuit, and the phase comparing circuit are activated at thepredetermined time interval. This is an update operation of confirmingphases of the internal clock signal ICLK1 and the external clock signalsCK and CKB at the predetermined time interval to eliminate phaseshifting due to temperature or voltage changes. Specifically, this is anoperation of updating information of the delay amount provided by thedelay adjusting circuit to the delay circuit at the predetermined timeinterval. Therefore, the internal clock signal ICLK1 generated in thesecond active state does not need to be supplied to the output buffercircuit 30 a shown in FIG. 2. The inactive state is a state where theinternal clock signal ICLK1 is not generated. However, information ofthe counter circuit 220 that holds update information included in thedelay adjusting circuit is held.

The impedance control signal IOCDT0 supplied from the input buffercircuit 72 is latched by an ODT latch circuit 82. The ODT latch circuit82 generates an impedance control signal IODT1 based on the impedancecontrol signal IODT0. The impedance control signal IODT1 is supplied tothe data input/output circuit 30 shown in FIG. 2.

Turning to FIG. 5, the ODT latch circuit 82 includes a latch circuit 84and a selector 85. The latch circuit 84 latches the impedance controlsignal IODT0 in synchronism with the internal clock signal ICLK0. Theselector 85 is a circuit that selects one of an output from the latchcircuit 84 and the impedance control signal IODT0, and selection isPerformed based on the self-state signal SS. Specifically, the outputfrom the latch circuit 84 is selected when the self-state signal SS hasa low level and the impedance control signal IODT0 is selected when theself-state signal SS has a high level. This means that the output fromthe latch circuit 84 is used as the impedance control signal IODT1during a period when the semiconductor device is not in the self-refreshmode and that the impedance control signal IODT0 is used as it is as theimpedance control signal IODT1 during a period when the semiconductordevice has entered the self-refresh mode.

The clock enable signal ICKE0 output from the input buffer circuit 73 islatched by a CKE latch circuit 83. The CKE latch circuit 83 latches theclock enable signal ICKE0 in synchronism with the internal clock signalICLK0, and a clock enable signal ICKE1 output from the CKE latch circuit83 is supplied to the self-refresh control circuit 100.

The self-refresh control circuit 100 is a circuit block that receivesthe clock enable signals ICKE0 and ICKE1, and a refresh command REFCOMand generates various internal signals. The refresh command REFCOM iscommon to the auto-refresh command REF and the self-refresh command SREincluded in the command signal CMD. The refresh command REFCOM is asignal that becomes active when the auto-refresh command REF or theself-refresh command SRE is input. The internal signals generated by theself-refresh control circuit 100 include an auto-refresh signal AREF0,the self-refresh signal SREF0, the enable signal CKen, the self-statesignal SS, and the reset signal RST. A specific circuit configuration ofthe self-refresh control circuit 100 is explained later.

As shown in FIG. 3, the auto-refresh signal AREF0 and the self-refreshsignal SREF0 are supplied to an OR gate circuit G1, and a refresh signalREF1 output therefrom is supplied to a refresh counter 90. The refreshcounter 90 generates eight refresh signals REF2<7:0> with a small shiftfrom each other eight consecutive times in a time sequence,respectively, in response to a plurality of toggles of the refreshsignal REF1 and an idle signal IDLE. In the first embodiment, the memorycell array 11 is divided into eight banks and the refresh signalsREF2<7:0> are used as refresh signals for corresponding banks <7:0>,respectively. That is, the idle signal IDLE is toggled seven times inresponse to one refresh signal REF1, so that each of the eight refreshsignals REF2<7:0> is generated eight times in a row, thereby selecting64 word lines.

The refresh signals REF2<7:0> are supplied to a row control circuit 95.The row control circuit 95 includes an address counter that has arefresh address stored therein and, when the refresh signals REF2<7:0>are activated, outputs the refresh address together with active signalsACT<7:0> to the corresponding banks <7:0>, respectively. When the activesignals ACT<7:0> are activated, a word line indicated by the refreshaddress is accessed in the corresponding banks <7:0>, respectively.Delayed active signals ACT_D<7; 0> are then fed back from thecorresponding banks <7:0>, respectively, to the row control circuit 95,so that a next refresh address is supplied. The row control circuit 95receives the delayed active signals ACT_D<7:0> and outputs the idlesignal IDLE to the refresh counter 90. The refresh counter 90 increasesa count value in response to the idle signal IDLE and generates theeight refresh signals REF2<7:0> again with a small shift with eachother. Refresh of the banks <7:0> is performed by a staggered operation.This routine is repeated eight times. By repeating this operation apredetermined number of times (eight times, for example), eight wordlines are selected in each of the banks <7:0> in a time sequence. Inthis way, a refresh operation for memory cells MC connected to a totalof the 64 word lines is completed. That is, internal refresh isperformed 64 times in a time sequence in response to activation of onerefresh signal REF1.

Turning to FIG. 6, the self-refresh control circuit 100 includes an SRlatch circuit L1 and an oscillator 150. Therefore, performing timings ofthe refresh operation are asynchronous with the external clock signalCK. Accordingly, when issuance of the self-refresh exit command SRX andan asynchronous refresh operation overlap, the latter has a priority.The SR latch circuit L1 includes a set node S and a reset node R and isset or reset when a low-level signal is input to the corresponding node.

To explain specifically, a signal indicating a negative AND of aninverse signal of the clock enable signal ICKE1 and the refresh commandREFCOM is input to the set node S of the SR latch circuit L1. On theother hand, an inverse signal of the clock enable signal ICKE0 is inputto the reset node R of the SR latch circuit L1 This causes the SR latchcircuit L1 to be set when the clock enable signal ICKE1 has a low leveland the refresh command REFCOM has a high level and to be reset when theclock enable signal ICKE0 has a high level. The clock enable signalICKE1 has the low level and the refresh command REFCOM has the highlevel when the self-refresh command SRE is issued, and the clock enablesignal ICKE0 has the high level when the self-refresh exit command SRXis issued. This means that the SR latch circuit L1 is set when theself-refresh command SRE is issued and reset when the self-refresh exitcommand SRX is issued.

A self-state signal SS output from the SR latch circuit L1 is invertedand used as an enable signal CKen. Therefore, the enable signal CKen hasa low level when the SR latch circuit L1 is set, and is activated to ahigh level when the SR latch circuit L1 is reset.

The self-state signal SS is supplied also to the oscillator 150. Theoscillator 150 starts when the SR latch circuit L1 is set andperiodically generates the self-refresh signal SREF0. Generation timingsof the self-refresh signal SREF0 are asynchronous with the externalclock signal CK. The self-refresh signal SREF0 is supplied to therefresh counter 90 shown in FIG. 3. The clock enable signal ICKE1 has ahigh level and the refresh command REFCOM has a high level when theauto-refresh command REF is issued, and a signal indicating an AND ofthe clock enable signal ICKE1 and the refresh command REFCOM is used asthe auto-refresh signal AREF0. The auto-refresh signal AREF0 is suppliedto the refresh counter 90 shown in FIG. 3.

The self-state signal SS is supplied also to the one-shot pulsegenerating circuit OP1. The one-shot pulse generating circuit OP1activates a reset signal RST in response to change of the self-statesignal SS from a high level to a low level. This means that the resetsignal RST is activated after the DLL circuit 200 is reset each time theself-refresh exit command SRX is issued.

Turning to FIG. 7, the DLL circuit 200 includes a delay line 210 thatdelays the internal clock signal ICLK0 to generate the internal clocksignal ICLK1. The delay line 210 is a circuit that generates theinternal clock signal ICLK1 by providing a delay corresponding to acount value COUNT of the counter circuit 220 to the internal clocksignal ICLK0.

The internal clock signal ICLK1 is supplied to the output buffer circuit30 a shown in FIG. 2 and is supplied also to a replica buffer circuit230. The replica buffer circuit 230 generates an internal clock signalRCLK as a replica based on the internal clock signal ICLK1 and has thesame characteristics the output buffer circuit 30 a. Because the outputbuffer circuit 30 a outputs read data DQ in synchronism with theinternal clock signal ICLK1, the internal clock signal RCLK output fromthe replica buffer circuit 230 is precisely synchronized with the readdata DQ. In a DRAM, read data DQ needs to be precisely synchronized withthe external clock signals CK and CKB and, when phase shifting occurstherebetween, the phase shifting needs to be detected and corrected.This detection is performed by the phase comparing circuit 240 and aresult thereof is fed back to the counter circuit 220 through a DLLcontrol circuit 250 to correct the phase shifting.

The phase comparing circuit 240 compares phases of the internal clocksignal ICLK0 and the internal clock signal RCLK with each other andgenerates a phase determination signal PD based on a comparison result.The internal clock signal ICLK0 has the same timing as the externalclock signals CK and CKB, and the internal clock signal RCLK has thesame timing as read data DQ, which implies that the phase comparingcircuit 240 indirectly compares phases of the external clock signals CKand CKB and the read data DQ with each other. When the comparison resultindicates that the internal clock signal RCLK is behind the internalclock signal ICLK0, the phase determination signal PD is set to one oflogic levels (a low level, for example). In response thereto, the DLLcontrol circuit 250 counts down a count value of the counter circuit220, thereby reducing a delay amount of the delay line 210. Conversely,when the internal clock signal RCLK is ahead of the internal clocksignal ICLK0, the phase determination signal PD is set to the otherlogic level (a high level, for example). In response thereto, the DLLcontrol circuit 250 counts up a count value of the counter circuit 220,thereby increasing a delay amount of the delay line 210. When phases ofthe internal clock signal ICLK0 and the internal clock signal RCLK arealigned with each other by periodically repeating this operation, phasesof the read data DQ and the external clock signals CK and CKB areconsequently aligned with each other.

The operation of the DLL control circuit 250 is controlled by a readsignal RD, the update start signal ST, and the reset signal RST. Theread signal RD is activated when a read command is issued and the DLLcontrol circuit 250 continues the update operation of the countercircuit 220 while the read signal RD is activated. This corresponds tothe first active state mentioned above and the internal clock signalICLK1 phase-controlled is continuously generated. On the other hand, theupdate start signal ST is periodically activated during the periods inwhich the semiconductor device 10 is not in the self-refresh mode and,when the update start signal ST is activated, the DLL control circuit250 performs the update operation of the counter circuit 220 for apredetermined period or a predetermined number of times. Thiscorresponds to the second active state mentioned above and is performedto eliminate phase shifting caused by temperature or voltage changes.After the update operation of the counter circuit 220 is performed forthe predetermined period or the predetermined number of times and thusthe internal clock signal ICLK1 acquires a desired phase, the DLLcontrol circuit 250 generates the update end signal END. At that time,the counter circuit 220 is not reset and transits to an inactive statewith a count value at the time of generation of the update end signalEND kept. Therefore, when the update start signal ST is periodicallyperformed, the internal clock signal ICLK1 phase-controlled can bepromptly generated when the read signal RD is issued.

The reset signal RST is activated when the DLL circuit 200 is to beentirely initialized and generated by the self-refresh control circuit100 shown in FIG. 6. When the reset signal RST is activated, the countvalue of the counter circuit 220 is reset to an initial value and thenthe DLL circuit 200 is activated until the internal clock signal ICLK1phase-controlled is generated. That is, previous update information iselectrically discarded. Therefore, once the reset signal RST isactivated, a certain time is required to enable output of the internalclock signal ICLK1 phase-controlled. The reset signal RST isautomatically generated within the semiconductor device 10 and activatedalso when a reset command is issued from the controller 50.

The circuit configuration of the access control circuit 20 according tothe first embodiment is as described above. An operation of the accesscontrol circuit 20 according to the first embodiment is explained next.

Turning to FIG. 8, the auto-refresh command REF is issued at a time t11,the self-refresh command SRE is issued at a time t12, the self-refreshexit command SRX is issued at a time t15, and the power-down command PDEis issued at a time t16. Therefore, the semiconductor device 10 is inthe self-refresh mode during a period of time from t12 to t15 and thesemiconductor device 10 is in the power-down mode during a period afterthe time t16.

During the periods in which the semiconductor device 10 is not in theself-refresh mode, the SR latch circuit L1 shown in FIG. 6 is reset andthus the enable signal CKen is fixed to a high level. Accordingly, theinput buffer circuit 71 shown in FIG. 3 is in an active state and theexternal clock signals CK and CKB can be input from the controller 50.Further, because the self-state signal SS is a low level, the impedancecontrol signal IODT1 which is latched by the latch circuit 84 is outputfrom the ODT latch circuit 82. That is, the impedance control signalIODT0 is latched by the CDT latch circuit 82 in synchronism with theinternal clock signal ICLK0, and the impedance control signal IODT0 as alatched signal is supplied to the output buffer circuit 30 a. Therefore,the impedance control signal CDT needs to be input in synchronism with arising edge of the external clock signal CK.

Accordingly, input of the impedance control signal CDT is effectiveduring a period in which a setup margin and a hold margin from a risingedge of the external clock signal CK are ensured, and is ineffective inother periods. In FIG. 8, the periods in which input of the impedancecontrol signal CDT is ineffective (Don't care) are shown by hatching.

When the auto-refresh command REF is issued at the time t11, theauto-refresh signal AREF0 is activated. In response thereto, the refreshcounter 90 generates the refresh signals REF2<7:0> for the correspondingbanks eight times and the row control circuit 95 supplies the activesignals ACT<7:0> to the corresponding banks eight times. The refreshaddress is incremented in the row control circuit 95, which causes eightdifferent word lines to be selected one after another in synchronismwith the eight active signals ACT<7:0>. As a result, a total of 64 wordlines are selected. To select these 64 word lines, a refresh period tRFCis required. Therefore, issuance of other commands by the controller 50is inhibited after the auto-refresh command REF is issued and before therefresh period tRFC passes.

When the self-refresh command SRE is issued at the time t12, the SRlatch circuit L1 shown in FIG. 6 is set, the self-state signal SSchanges to a high level, and the enable signal CRen is changed to a Lowlevel. This inactivates the input buffer circuit 71 shown in FIG. 3,thereby reducing power consumption. The clock issuing unit 52 of thecontroller 50 may stop supply of the external clock signal CK which itis continuing supplying till then in connection with issue of the selfrefresh command SRE during some period from the time t12 to the timet15. Power consumption of the system can be reduced.

When the semiconductor device enters the self-refresh mode, theoscillator 150 periodically outputs the refresh signal SREF0. When therefresh signal SREF0 is activated, the refresh counter 90 performs thesame operation as that performed when the auto-refresh signal AREF0 isactivated. That is, a total of 64 word lines are selected one afteranother.

Because the self-state signal SS is changed to a high level when thesemiconductor device enters the self-refresh mode, the impedance controlsignal ODT supplied from the controller is introduced as it is as theimpedance control signal IODT1. That is, the impedance control signalIODT1 is introduced independently of the external clock signals OK andORB. In an example shown in FIG. 8, the impedance control signal ODT isactivated to a high level during a period of time from t13 to t14 and isinternally used as it is as the impedance control signal IODT1. As aresult, although the input buffer circuit 71 that receives the externalclock signals OK and ORB is inactivated during the period when thesemiconductor device has entered the self-refresh mode, the outputbuffer circuit 30 a shown in FIG. 2 can perform an impedance control ofthe data terminal 31 independently of the external clock signals OK andORB.

When the self-refresh exit command SRX is issued at the time t15, the SRlatch circuit L1 shown in FIG. 6 is reset and the enable signal CKen ischanged to the high level. This activates the input buffer circuit 71and enables input of the external clock signal CK and the impedancecontrol signal ODT.

Furthermore, the reset signal RST is output from the one-shot pulsegenerating circuit OP1 in response to change of reset of the SR larchcircuit L1. As described above, the reset signal RST is for entirelyinitializing the DLL circuit 200 and, when the reset signal RST isactivated, the count value of the counter circuit 220 is reset to aninitial value. Accordingly, a certain time is required to enable outputof the internal clock signal ICLK1 phase-controlled. In this example,issuance of the second command is inhibited until 512 clock cycles havepassed from issuance of the self-refresh exit command SRX. The 512 clockcycles are longer than a maximum period required to lock the DLL circuit200 after the DLL circuit 200 is reset. That is, when the 512 clockcycles have passed, it means that the DLL circuit 200 is definitelylocked.

On the other hand, the command for performing an access to the memorycell array 11 based on a row address, that is, the first command cannotbe issued at least until passage of the refresh period tRFC fromissuance of the self-refresh exit command SRX. This is because therefresh operation is performed in asynchronism with the external clocksignal CK during the self-refresh mode and thus the refresh operationmay be performed when the self-refresh exit command SRX is issued. Aminimum period after the self-refresh exit command SRX is issued andbefore the first command can be issued is tRFC+10 ns, for example. Thatis, issuance of the first command is allowed when tRFC+10 ns have passedfrom issuance of the self-refresh exit command SRX.

In this example, the power-down command PDE is issued at the time t16and the impedance control signal ODT is activated to the high levelduring a period of time from t17 and t18 in which the semiconductordevice has entered the power-down mode. Because the impedance controlsignal ODT is introduced in synchronism with the internal clock signalICLK0 during this period, the output buffer circuit 30 a shown in FIG. 2can perform an impedance control of the data terminal 31 in synchronismwith the external clock signals CK and CKB.

Turning to FIG. 9, the power-down command PDE is issued at a time t21,the power-down exit command PDX is issued at a time t22, the firstcommand A is issued at a time t23, and the second command B is issued ata time t24. Therefore, the semiconductor device 10 is in a power-downmode during a period of time from t21 to t22.

In this case, the power-down mode is an operation mode in which input ofthe first and second commands is inhibited as in the self-refresh modecompliant with the DRAM standards. Major differences of the power-downmode from the self-refresh mode are such that the controller needs tocontinuously supply the external clock signals OK and CKB to thesemiconductor device 10 and can input the impedance control signal ODTin the power-down mode, and that the semiconductor device does notperform an automatic refresh operation (refresh of storage data), causesthe DLL circuit to operate, and activates an input circuit (input buffercircuit) connected to an external terminal of the semiconductor device10 while reducing power consumption of internal circuits of thesemiconductor device 10 in the power-down mode and the like. Forexample, the input buffer circuit 71 connected to the clock terminals 23and 24 is activated in the power-down mode and is inactivated in theself-refresh mode complying with the DRAM standards. Due to thesedifferences, while a period before a command (the first command) can beinput after power-down exit is advantageously shorter in the power-downmode than in the self-refresh mode, power consumption in theself-refresh mode is lower than in the power-down mode. This isparticularly because the input buffer circuit 71 and the DLL circuit 200are activated in the power-down mode.

A minimum period after the power-down exit command PDX is issued andbefore the first command A can be issued is shorter than a minimumperiod after the self-refresh exit command SRX is issued and before thefirst command A can be issued. Specifically, issuance of the firstcommand A is allowed when, for example, 7.5 as have passed afterissuance of the power-down exit command PDX. This is because no refreshoperation is performed in the power-down mode and thus a state where norefresh operation is performed is ensured at a time when the power-downexit command PDX is issued.

A minimum period after the power-down exit command PDX is issued andbefore the second command B can be issued is shorter than a minimumperiod after the self-refresh exit command SRX is issued and before thesecond command B can be issued. Specifically, issuance of the secondcommand B is allowed when, for example, 24 ns have passed after issuanceof the power-down exit command PDX. This is because the external clocksignal CK is input in the power-down mode and thus the update operationof the DLL circuit 200 can be performed, which enables the DLL circuit200 to be kept in a locked state.

Because not specified in the DRAM standards, the operation of the firstembodiment mentioned above cannot ensure as it is compatibility with aDRAM complying with the standards (JEDEC (Joint Electron DeviceEngineering Council) Solid State Technology Association). When thiscauses a problem, it is desirable to use a configuration that enables toswitch between the operation of the first embodiment and the operationspecified in the standards. That is, it suffices to design a circuit toperform the operation meeting the DRAM standards in the first operationmode and perform the operation of the first embodiment in the secondoperation mode.

Turning to FIG. 8, while a circuit shown in FIG. 10 is different fromthat shown in FIG. 3, it is unnecessary to separately provide thecircuit shown in FIG. 3 and that shown in FIG. 10 but it suffices toswitch functions according to a selected operation mode. Therefore, itsuffices to realize function switching by using a gate circuit or thelike (not shown) to function as the circuit shown in FIG. 10 when thefirst operation mode is selected and to function as the circuit shown inFIG. 3 when the second operation mode is selected.

In the access control circuit 20 shown in FIG. 10, the enable signalCKen is supplied to an input buffer circuit 72 a in addition to theinput buffer circuit 71. With this configuration, when the semiconductordevice enters the self-refresh mode, the input buffer circuits 71 and 72a are both fixed to an inactive state. Accordingly, power consumption isreduced more than in the second operation mode.

Turning to FIG. 11, the auto-refresh command REF is issued at a timet31, the self-refresh command SRE is issued at a time t32, and theself-refresh exit command SRX is issued at a time t33. Therefore, thesemiconductor device 10 is in the self-refresh mode during a period oftime from t32 to t33 and the semiconductor device 10 is not in theself-refresh mode during other periods.

During the periods in which the semiconductor device 10 is not in theself-refresh mode, the SR latch circuit L1 shown in FIG. 6 is reset andthus the enable signal CKen is fixed to a high level. Accordingly, theinput buffer circuits 71 and 72 a shown in FIG. 3 are active. When theauto-refresh command REF is issued at the time t31 in this state, theauto refresh signal AREF0 is activated. An operation performed in thiscase is as explained with reference to FIG. 8.

When the self-refresh command SRE is issued at the time t32, the SRlatch circuit L1 shown in FIG. 6 is set and the enable signal CKen ischanged to a low level. This inactivates the input buffer circuits 71and 72 a shown in FIG. 10 and reduces power consumption. The impedancecontrol signal ODT cannot be input during a period when thesemiconductor device has entered the self-refresh mode. In FIG. 11, theperiods in which input of the impedance control signal ODT isineffective (Don't care) are shown by hatching. In the example shown inFIG. 11, the impedance control signal CDT is not input (that is, Don'tcare) in most of the period when the semiconductor device 10 is in theself-refresh mode. The impedance control signal ODT cannot be suppliedfrom the controller 50 in most of the period when the semiconductordevice 10 is in the self-refresh mode because the input buffer circuit72 a is inactivated in this period. Specifically, logic of generatingthe enable signal CKen shown in FIG. 6 is simplified to facilitateunderstanding, and the input buffer circuit 72 a shown in FIG. 10 isactivated to introduce the impedance control signal ODT supplied fromoutside into the semiconductor device each time the self-refresh commandSRE is issued at the time t12 and the self-refresh exit command SRX isissued at the time t13. The same holds true for the ODT latch circuit 82that generates the impedance control signal IODT1 and the internal clocksignal ICLK0 for controlling the ODT latch circuit 82. That is, theself-refresh control circuit 100 shown in FIG. 6 contributes to clearunderstanding of a difference from a self-refresh control circuit 100 baccording to a third embodiment, which is shown in FIG. 16 and explainedlater, for example.

When the semiconductor device 10 has entered the self-refresh mode, therefresh signal SREF0 is periodically output from the oscillator 150 andthe same operation as in the case where the auto refresh signal AREF0 isactivated is performed. While the refresh signal SREF0 is activated oncein FIG. 11, the refresh signal SREF0 is periodically generated by theoscillator 150 during the period when the semiconductor device 10 hasentered the self-refresh mode.

When the self-refresh exit command SRX is issued at the time t33, the SRlatch circuit L1 shown in FIG. 6 is reset and the enable signal CKen ischanged to the high level. This activates the input buffer circuits 71and 72 a and enables input of the external clock signal CK and theimpedance control signal DDT. Furthermore, the reset signal RST isoutput from the one-shot pulse generating circuit OP1, thereby resettingthe DLL circuit 200. Consequently, issuance of the second command isinhibited until the DLL circuit 200 is locked. In the example shown inFIG. 11, the second command B is issued at a time t35. A minimum periodafter the self-refresh exit command SRX is issued and before the secondcommand B can be issued is the same between the first operation mode andthe second operation mode.

A timing when the first command can be issued after the self-refreshexit command SRX is issued is the same as that in the second operationmode mentioned above. In the example shown in FIG. 11, the first commandA is issued at a time t34.

As described above, when the first operation mode is selected, theoperation complying with the standards is performed although theimpedance control signal ODT cannot be issued during a period when thesemiconductor device has entered the self-refresh mode. Therefore,compatibility with the existing DRAM can be ensured.

In either case where the first or second operation mode is selected,frequencies of the external clock signals CK and CKB can be changed whenthe semiconductor device enters the self-refresh mode and then exits theself-refresh mode. This is because the external clock signals CM and CKBare not used during the entry into the self-refresh mode.

Turning to FIG. 12, the access control circuit 20 a is different fromthe access control circuit 20 shown in FIG. 3 in that an auto-refreshcounter 91 and a self-refresh counter 92 are included instead of therefresh counter 90 and that an OR gate circuit G2 is arranged at asubsequent stage of the counters 91 and 92. Other features of the accesscontrol circuit 20 a are basically the same as those of the accesscontrol circuit 20 shown in FIG. 3, and therefore like elements aredenoted by like reference characters and redundant explanations thereofwill be omitted.

As shown in FIG. 12, the auto-refresh signal AREF0 is supplied from theself-refresh control circuit 100 to the auto-refresh counter 91, and theself-refresh signal SREF0 is supplied from the self-refresh controlcircuit 100 to the self-refresh counter 92. The auto-refresh counter 91outputs an auto-refresh signal AREF1<7:0> and the self-refresh counter92 outputs a self-refresh signal SREF1. These auto-refresh signalAREF1<7:0> and self-refresh signal SREF1 are input to the OR gatecircuit G2, and a refresh signal REF2 output thereof is supplied to therow control circuit 95. The auto-refresh counter 91 generates eightauto-refresh signals AREF1<7:0> with a small shift from each other eightconsecutive times in a time sequence, respectively, in response to theauto-refresh signal AREF0. The self-refresh counter 92 generates eightself-refresh signals SREF1<7:0> with a small shift from each other twoconsecutive times in a time sequence, respectively, in response to theself-refresh signal SREF0.

Turning to FIG. 13A, the auto-refresh counter 91 includes an 8-bitcounter 91 a that performs an 8-count operation when the auto-refreshsignal. AREF0 and the idle signal IDLE are both activated to a highlevel. The idle signal IDLE has a high level when the row controlcircuit 95 is in an idle state. Therefore, when the auto-refresh signalAREF0 is activated in a case where the row control circuit 95 is in anidle state, the 8-bit counter 91 a generates an auto-refresh signalAREF1<0> eight times. Specifically, the idle signal IDLE is toggledseven times during a period when the auto-refresh signal AREF0 has ahigh level and the 8-bit counter 91 a is counted up, thereby generatingthe auto-refresh signal AREF1<0> eight times. The auto-refresh signalAREF1<0> passes through a plurality of delay circuits 91 b cascaded andis output as auto-refresh signals AREF1<1> to AREF1<7>. Accordingly, theauto-refresh signals AREF1<0> to AREF1<7> are activated in a staggeredoperation with timings thereof slightly shifted with each other. This isto shift timings of refresh operations in the respective banks with eachother to suppress a peak current.

With this configuration, when the auto-refresh signal AREF0 is activatedand the idle signal IDLE is toggled seven times in the case where therow control circuit 95 is in an idle state, each of the auto-refreshsignals AREF1<0> to AREF1<7> is activated eight times. These signals aresupplied to the row control circuit 95 through the OR gate circuit G2.When the refresh signal REF1 is activated, the refresh operation isperformed for a refresh address indicated by an address counter includedin the row control circuit 95 and also a value of the address counter isincremented (or decremented). This causes eight word lines to beselected one after another in each bank, so that memory cells MCconnected to the selected word lines are refreshed. That is, 64 wordlines are selected in response to one auto-refresh signal AREF0.

On the other hand, turning to FIG. 13B, the self-refresh counter 92includes a 2-bit counter 92 a that performs a 2-count operation when theself-refresh signal SREF0 and the idle signal IDLE are both activated toa high level. Therefore, when the self-refresh signal SREF0 is activatedin a case where the row control circuit 95 is in an idle state, the2-bit counter 92 a generates a self-refresh signal SREF1<0> twice.Specifically, the idle signal IDLE is toggled once during a period whenthe self-refresh signal SREF0 has a high level and the 2-bit counter 92a is counted-up, thereby generating the self-refresh signal SREF1<0>twice. The self-refresh signal SREF1<0> passes through a plurality ofdelay circuits 92 b cascaded and is output as self-refresh signalsSREF1<1> to SREF1<7>.

With this configuration, when the self-refresh signal SREF0 is activatedin the case where the row control circuit 95 is in an idle state, eachof the self-refresh signals SREF1<0> to SREF1<7> is activated twice.This causes two word lines to be selected one after the other in eachbank, so that memory cells MC connected thereto are refreshed. That is,16 word lines are selected in response to one self-refresh signal self0.

Turning to FIG. 14, the auto-refresh command REF is issued at a timet41, the self-refresh command SRE is issued at a time t42, theself-refresh exit command SRX is issued at a time t45, and thepower-down command PDE is issued at a time t46. Therefore, thesemiconductor device 10 is in the self-refresh mode during a period oftime from t42 to t45 and the semiconductor device 10 is in thepower-down mode during a period after the time t46.

An operation performed during a period before the semiconductor device10 enters the self-refresh mode is the same as that in the firstembodiment. Therefore, when the auto-refresh command REF is issued atthe time t41, the row control circuit 95 supplies an active signal toeach bank eight times. This causes eight word lines to be selected oneafter another, so that memory cells MC connected to a total of 64 wordlines are refreshed. As mentioned above, the refresh period tRFC isrequired to select 64 word lines. Therefore, issuance of other commandsis inhibited until the refresh period tRFC has passed after issuance ofthe auto-refresh command REF.

When the self-refresh command SRE is issued at the time t42, thesemiconductor device 10 enters the self-refresh mode. When thesemiconductor device 10 has entered the self-refresh mode, and refreshsignal SREF0 periodically output from the oscillator 150.

When the refresh signal SREF0 is activated, the self-refresh signalSREF1<0> is output twice by the 2-bit counter 92 a included in theself-refresh counter 92, and the row control circuit 95 supplies theactive signals ACT<7:0> to the corresponding banks twice. This causestwo word lines to be selected one after the other, so that memory cellsMC connected to a total of 16 word lines are refreshed. A refresh periodtRFC2 required to select 16 word lines is shorter than the refreshperiod tRFC required to select 64 word lines and is about a quarterthereof. Accordingly, a period when the oscillator 150 issues therefresh signal SREF0 is also reduced to a quarter of that in the firstembodiment.

When the semiconductor device enters the self-refresh mode, as is thecase with the first embodiment, the impedance control signal CDTsupplied from the controller is introduced as it is as the impedancecontrol signal IODT1. That is, the impedance control signal IODT1 isintroduced independently of (in asynchronism with) the external clocksignals CK and CKB. In an example shown in FIG. 14, the impedancecontrol signal CDT is activated to a high level during a period of timefrom t43 to t44 and is internally used as it is as the impedance controlsignal IODT1.

When the self-refresh command SRX is issued at the time t45, the SRlatch circuit L1 is reset and the enable signal CKen changes to a highlevel. Accordingly, the input buffer 71 is activated and input of theexternal clock signal CK is enabled. In response to that the SR latchcircuit L1 is reset, the reset signal RST is output from the one-shotpulse generating OP1 and the DLL circuit 200 is reset. A certain time isrequired to enable output of the internal clock signal ICLK1phase-controlled.

On the other hand, the command for performing an access to the memorycell array 11 based on a row address, that is, the first command cannotbe issued at least until passage of the refresh period tRFC2 fromissuance of the self-refresh exit command SRX. In the second embodiment,a minimum period after the controller issues the self-refresh exitcommand SRX and before the first command can be issued is tRFC2+10 ns,for example. That is, issuance of the first command is allowed whentRFC2+10 no have passed from issuance of the self-refresh exit commandSRX. Because tRFC2<tRFC, the period from issuance of the self-refreshexit command SRX until the first command can be input can be greatlyreduced as compared to the first embodiment.

In this example, the power-down command PDE is issued at the time t46and the impedance control signal ODT is activated to the high levelduring a period of time from t47 and t48 in which the semiconductordevice has entered the power-down mode. Because the impedance controlsignal ODT is introduced in synchronism with the internal clock signalICLK0 during this period, the output buffer circuit 30 a shown in FIG. 2can perform an impedance control of the data terminal 31 in synchronismwith the external clock signals CK and CKB.

As described above, according to the second embodiment, the effect ofthe first embodiment mentioned above can be obtained and also the periodfrom issuance of the self-refresh exit command SRX until the firstcommand can be input can be greatly reduced. Also the operation of thesecond embodiment is not specified in the DRAM standards and thus it isdesirable to use a configuration that enables switching between theoperation of the second embodiment and the operation specified in thestandards. That is, it suffices to design a circuit to perform theoperation complying with the DRAM standards in the first operation modeand perform the operation of the second embodiment mentioned above inthe second operation mode. The first operation mode is as alreadyexplained.

The third embodiment of the present invention is explained next.

Turning to FIG. 15, the access control circuit 20 b uses a self-refreshcontrol circuit 100 b instead of the self-refresh control circuit 100.The self-refresh control circuit 100 b supplies an update start signalST to the DLL circuit 200 and receives an update end signal END outputfrom the DLL circuit 200. Other features of the access control circuit20 a are basically the same as those of the access control circuit 20shown in FIG. 3, and therefore like elements are denoted by likereference characters and redundant explanations thereof will be omitted.

Turning to FIG. 16, the self-refresh control circuit 100 b is differentfrom the self-refresh control circuit 100 shown in FIG. 6 in that an SRlatch circuit L2 is used instead of the one-shot pulse generatingcircuit OP1 and that a NAND gate circuit G0 that receives outputs fromthe SR latch circuits L1 and L2 is added. The output from the SR latchcircuit L1 is used as the self-state signal SS and an output from theNAND gate circuit G0 is used as the enable signal CKen. Other featuresof the self-refresh control circuit 100 a are basically the same asthose of the self-refresh control circuit 100 shown in FIG. 6, andtherefore like elements are denoted by like reference characters andredundant explanations thereof will be omitted.

A signal indicating a negative AND of the self-state signal SS and theself-refresh signal SREF0 is input to the set node S of the SR latchcircuit L2. An inverse signal of the update end signal END is input tothe reset node R of the SR latch circuit L2. This causes the SR latchcircuit L2 to be set each time the self-refresh signal SREF0 isactivated and to be reset each time the update end signal END isactivated in a state where the semiconductor device has entered theself-refresh mode.

A signal indicating an AND of the self-state signal SS and theself-refresh signal SREF0 is used as the update start signal ST. Theupdate start signal ST is supplied to the DLL circuit 200 shown in FIG.15.

Furthermore, outputs of the SR latch circuits L1 and L2 are supplied toa NAND gate circuit G0, and an output thereof is used as the enablesignal CKen. Therefore, the enable signal CKen has a low level when theSR latch circuit L1 is set and the SR latch circuit L2 is reset. Inother states, the enable signal CKen is always activated to a highlevel.

Turning to FIG. 17, the auto-refresh command REF is issued at a timet51, the self-refresh command SRE is issued at a time t52, theself-refresh exit command SRX is issued at a time t55, and thepower-down command PDE is issued at a time t56. Therefore, thesemiconductor device 10 is in the self-refresh mode during a period oftime from t52 to t55 and the semiconductor device 10 is in thepower-down mode during after the time t56.

When the auto-refresh command REF is issued at the time t51 in thisstate, the auto refresh signal AREF0 is activated. An operationperformed in this case is as explained with reference to FIG. 8.

When the self-refresh command SRE is issued at the time t52, the SRlatch circuit L1 shown in FIG. 16 is set and the self-state signal SS ischanged to a high level. Accordingly, the CDT latch circuit 82 outputsthe impedance control signal IODT0 as it is as the impedance controlsignal IODT1. Furthermore, the enable signal CKen is changed to a lowlevel because the SR latch circuit L2 is reset. This inactivates theinput buffer circuit 71 shown in FIG. 11, thereby reducing powerconsumption.

When the semiconductor device enters the self-refresh mode, theoscillator 150 periodically outputs the refresh signal SREF0. When therefresh signal SREF0 is activated, the access control circuit 20 aperforms the same operation as the case where it is operating in thesecond operation mode in the first embodiment. That is, a total of 64word lines are selected one after another. Furthermore, when the refreshsignal SREF0 is activated, the SR latch circuit L2 shown in FIG. 16 isset and thus the enable signal CKen is changed to a high level. Thisactivates the input buffer circuit 71 shown in FIG. 15, thereby enablingreception of the external clock signal CR. Because the update startsignal ST is also activated, DLL circuit 200 generates the internalclock signal ICLK1 phase-controlled, based on the internal clock signalICLK0 output from the input buffer circuit 71. That is, the updateoperation of the DLL circuit 200 is performed.

When the update operation of the DLL circuit 200 ends, the DLL circuit200 outputs the update end signal END and then the SR latch circuit L2is reset. This causes the enable signal CKen to be changed to the lowlevel again, thereby inactivating the input buffer circuit 71.Therefore, power consumption of the input buffer circuit 71 can bereduced during periods other than an update time of the DLL circuitperforming self refresh. At that time, the counter circuit 220 is notreset and transits to an inactive state with a count value at the timeof generation of the update end signal END kept.

While the refresh signal SREF0 is activated once in FIG. 17, the refreshsignal SREF0 is periodically generated by the oscillator 150 during aperiod when the semiconductor device has entered the self-refresh mode.Accordingly, the input buffer circuit 71 and the DLL circuit 200 areactivated each time the refresh signal SREF0 is generated. In this way,because the input buffer circuit 71 and the DLL circuit 200 areintermittently activated even when the semiconductor device has enteredthe self-refresh mode, the DLL circuit 200 can keep locked state (astate where the internal clock signal ICLK0 and the internal clocksignal RCLK have phases almost matched). In addition, because the inputbuffer circuit 71 and the DLL circuit 200 are not always activated butintermittently activated based on the refresh signal SREF0 during theself-refresh mode and are inactivated during other periods, uselesspower consumption can be avoided.

When the semiconductor device enters the self-refresh mode, as is thecase with the first embodiment, the impedance control signal ODTsupplied from the controller is introduced as it is as the impedancecontrol signal IODT1. That is, the impedance control signal IODT1 isintroduced independently of the external clock signals CK and CKB. In anexample shown in FIG. 17, the impedance control signal ODT is activatedto a high level during a period of time from t53 to t54 and isinternally used as it is as the impedance control signal IODT1.

When the self-refresh exit command SRX is issued at the time t55, the SRlatch circuit L1 shown in FIG. 16 is reset, the self-state signal SS ischanged to the low level, and the enable signal CKen is changed to thehigh level. This activates the input buffer circuit 71 and enables inputof the external clock signal Cr.

At that time, the DLL circuit 200 is already in the locked state andthus the controller can issue the command for controlling a state of thedata terminal in synchronism with the internal clock signal ICLK1, thatis, the second command in a short time. In the third embodiment, the DLLcircuit 200 is not reset in response to the self-refresh exit commandSRX. A minimum period after the self-refresh exit command SRX is issuedand before the second command can be issued is 24 nanoseconds (ns), forexample. That is, issuance of the second command B is allowed 24 nsafter the self-refresh exit command SRX is issued.

On the other hand, a minimum period after the self-refresh exit commandSRX is issued and before the first command can be input is the same asthat in the case that the access control circuit 20 a operates in thesecond operation mode. A minimum period after the controller issues theself-refresh exit command SRX and before the first command A can beissued is tRFC+10 ns, for example. That is, issuance of the firstcommand is allowed when tRFC+10 ns have passed from issuance of theself-refresh exit command SRX.

As described above, according to the second embodiment, in addition tothe effect of the first embodiment, the input buffer circuit 71 and theDLL circuit 200 are intermittently activated in conjunction with eachother and therefore the locked state of the DLL circuit 200 can bemaintained during a period when the semiconductor device has entered theself-refresh mode. This enables issuance of the second command at ashort time after the self-refresh exit command SRX is issued. Inaddition, the input buffer circuit 71 and the DLL circuit 200 are notalways activated but intermittently activated in conjunction with eachother based on the refresh signal SREF0, and are inactivated duringother periods. Accordingly, increase in the power consumption can beminimized.

Also the operation of the third embodiment is not specified in the DRAMstandards and thus it is desirable to use a configuration that enablesswitching between the operation of the third embodiment and theoperation specified in the standards. That is, it suffices to design acircuit to perform the operation complying with the DRAM standards inthe first operation mode and perform the operation of the thirdembodiment mentioned above in the second operation mode. The firstoperation mode is as already explained.

The fourth embodiment of the present invention is explained next.

An access control circuit according to the fourth embodiment has aconfiguration in which the self-refresh control circuit 100 b isreplaced by a self-refresh control circuit 100 c. Other features of theaccess control circuit of the fourth embodiment are basically the sameas those of the access control circuit 20 b shown in FIG. 15.

Turning to FIG. 18, the self-refresh control circuit 100 c is differentfrom the self-refresh control circuit 100 b shown in FIG. 16 in that theone-shot pulse generating circuit OP1 is used instead of the oscillator150. A signal supplied to the set node S of the SR latch circuit L1 isused as it is as the self-refresh signal SREF0. Output from the one-shotpulse generating circuit OP1 is used as the update start signal ST.Other features of the self-refresh control circuit 100 a are basicallythe same as those of the self-refresh control circuit 100 b shown inFIG. 16, and therefore like elements are denoted by like referencecharacters and redundant explanations thereof will be omitted.

With this configuration, the self refresh signal SREFR0 is activated andrefresh operation is performed once each time the self-refresh command.SRE is issued. The update operation of the DLL circuit 200 is started.

An output of the one-shot pulse generating circuit OP1 is supplied tothe set node S of the SR latch circuit L2. An inverse signal of theupdate end signal END is input to the reset node R of the SR latchcircuit L2. This causes the SR latch circuit L2 to be set each time theself-refresh exit signal SRX is issued. Furthermore, outputs of the SRlatch circuits L1 and L2 are supplied to a NAND gate circuit G0, and anoutput thereof is used as the enable signal CKen. Therefore, the enablesignal CKen has a low level when the SR latch circuit L1 is set and theSR latch circuit L2 is reset. In other states, the enable signal CKen isalways activated to a high level.

Turning to FIG. 19, the auto-refresh command REF is issued at a timet61, the self-refresh command SRE is issued at a time t62, theself-refresh exit command SRX is issued at a time t65, and theself-refresh command SRE is issued again at a time t66. Therefore, thesemiconductor device 10 is in the self-refresh mode during a period oftime from t62 to t63 and a period after the time t65, and thesemiconductor device 10 is not in the self-refresh mode during otherperiods. Although not shown in FIG. 19, the self-refresh command SRE andthe self-refresh exit command SRX are periodically and alternatelyissued during a period after the time t62, and such a control isexecuted when the controller 50 causes the semiconductor device to entera pseudo self-refresh mode. The pseudo self-refresh mode is an operationmode to realize low power consumption as in the case where a DRAMcompliant with the standards has entered the self-refresh mode, byperiodically and alternately issuing the self-refresh command SRE andthe self-refresh exit command SRX. Accordingly, during a period when thesemiconductor device has entered the pseudo self-refresh mode, othercommands such as the first and second commands are not issued during aperiod after the self-refresh exit command SRX is issued and before thenext self-refresh command SRE is issued. However, the impedance controlsignal ODT can be always issued. In the pseudo self-refresh mode, theself-refresh command SRE is issued immediately after issuance of theself-refresh exit command SRX. This feature is fundamentally differentfrom the case of the normal DRAM that returns from the self-refresh modeand then enters the self-refresh mode.

An operation performed during a period before the semiconductor device10 enters the self-refresh mode is the same as that in the firstembodiment. Therefore, when the auto-refresh command REF is issued atthe time t61, the row control circuit 95 supplies the active signalsACT<7:0> to each bank eight times. This causes eight word lines to beselected one after another, so that memory cells MC connected to a totalof 64 word lines are refreshed.

When the self-refresh command SRE is issued at the time t62, the SRlatch circuit L1 shown in FIG. 18 is set and the self-state signal SS ischanged to a high level. Accordingly, the OPT latch circuit 82 shown inFIG. 15 outputs the impedance control signal IODT0 as it is as theimpedance control signal IODT1. Furthermore, the enable signal Chen ischanged to a low level because the SR latch circuit L2 is reset. Thisinactivates the input buffer circuit 71 shown in FIG. 3, therebyreducing power consumption.

When the self-refresh command SRE is issued, the self-refresh signalSREF0 is immediately activated. When the self-refresh signal SREF0 isactivated, the refresh counter 90 performs the same operation as thatperformed when the auto-refresh signal AREF0 is activated. That is, atotal of 64 word lines are selected one after another. In thisembodiment, the refresh operation executed in the self-refresh mode isone-time event.

When the semiconductor device enters the self-refresh mode, as is thecase with the first embodiment, the impedance control signal CDTsupplied from the controller is introduced as it is as the impedancecontrol signal IODT1. That is, the impedance control signal IODT1 isintroduced independently of the external clock signals CR and CKB. In anexample shown in FIG. 19, the impedance control signal CDT is activatedto a high level during a period of time from t63 to t64 and isinternally used as it is as the impedance control signal IODT1.

When the self-refresh exit command SRX is issued at the time t65, the SRlatch circuit L1 shown in FIG. 18 is reset, the self-state signal SS ischanged to the low level, and the enable signal CKen is changed to thehigh level. This activates the input buffer circuit 71 and enables inputof the external clock signal CK.

Furthermore, an update start signal ST is output from the one-shot pulsegenerating circuit OP1 in response to change of the self-state signal SSto a low level. Accordingly, the DLL circuit 200 generates the internalclock signal ICLK1 phase-controlled, based on the internal clock signalICLK0 output from the input buffer circuit 71. That is, the updateoperation of the DLL circuit 200 is performed. When the update operationof the DLL circuit 200 is finished, an update end signal END is outputfrom the DLL circuit 200, thereby resetting the SR latch circuit L2. Itis desirable that a timing when the controller 50 resumes issuance ofthe external clock signal CK be before a time t65. This is because theupdate operation of the DLL circuit 200 is performed immediately inresponse to the self-refresh exit command ERR in the present embodiment.

In the example shown in FIG. 19, the self refresh command SRE is issuedagain during a period when the update operation of the DLL circuit 200is performed, that is, a period after the update start signal ST isactivated and before the update end signal END is activated (a timet66). This causes the SR latch circuit L1 to be set again. However,because the SR latch circuit L2 is already set at that time, the enablesignal CKen keeps a high level. When the update end signal END is outputand accordingly the SR latch circuit L2 is reset, the enable signal CKenis changed to a low level, thereby inactivating the input buffer circuit71.

This operation, that is, an operation of alternately issuing theself-refresh command SRE and the self-refresh exit command SRX isrepeatedly performed during a period when the controller 50 causes thesemiconductor device to enter the pseudo self-refresh mode mentionedabove. When an issuance period of the self-refresh command SRE ismatched with a performing period of the refresh operation in theself-refresh mode of the normal DRAM (about 7.8 μs), all memory cells MCcan be refreshed within a unit period (64 ms in the standards). Thismeans it suffices that the number of the self-refresh commands SREissued in each unit period is matched with the number of theauto-refresh commands REF issued in each unit period.

As described above, because the refresh operation is performed onlyonce, in response to the self-refresh command SRE in the presentembodiment, a state where no refresh operation is performed is ensuredat a time when the self-refresh exit command SRX is issued after therefresh period tRFC has passed from issuance of the self-refresh commandSRE. Accordingly, issuance of the first command is enabled a short timeafter issuance of the self-refresh exit command SRX. Furthermore,because the update operation of the DLL circuit 200 is performed inresponse to the self-refresh exit command SRX, a state where the DLLcircuit 20 is locked is maintained also during the pseudo self-refreshmode. Therefore, the second command using the internal clock signalICLK1 can be issued a short time after issuance of the self-refresh exitcommand SRX.

Turning to FIG. 20, the auto-refresh command REF is issued at a timet71, the self-refresh command SRE is issued at a time t72, theself-refresh exit command SRX is issued at a time t73, a first command Ais issued at a time t74, and a second command B is issued at a time t75.The operation when the self-refresh command SRE and the self-refreshexit command SRX are issued is described above, therefore redundantexplanation is omitted.

As shown in FIG. 20, a minimum period after the self-refresh exitcommand SRX is issued and before the first command A can be issued isgreatly reduced as compared to the common DRAM and is 7.5 ns, forexample. That is, issuance of the first command A is allowed when 7.5 nshave passed from issuance of the self-refresh exit command SRX. This isbecause a state where no refresh operation is performed is ensured at atime when the self-refresh command SRX is issued, as described above.

Also a minimum period after the self-refresh exit command SRX is issuedand before the second command B can be issued is greatly reduced ascompared to the common DRAM and is 24 ns, for example. That is, issuanceof the second command B is allowed when 24 ns have passed from issuanceof the self-refresh exit command SRX.

Turning to FIG. 21, the power-down command PDE is issued at a time t81,the power-down exit command PDX is issued at a time t82, the firstcommand A is issued at a time t83, and the second command B is issued ata time t84. Therefore, the semiconductor device 10 is in a power-downmode during a period of time from t81 to t82.

A minimum period after the power-down exit command PDX is issued andbefore the first command A can be issued is equal to a minimum periodafter the self-refresh exit command SRX is issued and before the firstcommand A can be issued. That is, issuance of the first command A isallowed when, for example, 7.5 no have passed after issuance of thepower-down exit command PDX. This is, as mentioned above, because norefresh operation is performed in the power-down mode and thus a statewhere no refresh operation is performed is ensured at a time when thepower-down exit command PDX is issued.

A minimum period after the power-down exit command PDX is issued andbefore the second command B can be issued is equal to a minimum periodafter the self-refresh exit command SRX is issued and before the secondcommand B can be issued. That is, issuance of the second command B isallowed when, for example, 24 ns have passed after issuance of thepower-down exit command PDX. This is because the external clock signalCK is input in the power-down mode and thus the update operation of theDLL circuit 200 can be performed, which enables the DLL circuit 200 tobe kept in a locked state.

As described above, according to the fourth embodiment, the effect ofthe first embodiment mentioned above is obtained and also the minimuminput times of the first or second command after exit in theself-refresh mode and the power-down mode are the same. This means thatthe conventional problem that a recovery time from the self-refresh modeis long is solved. Also the operation of the fourth embodiment is notspecified in the DRAM standards and thus it is desirable to use aconfiguration that enables switching between the operation of the fourthembodiment and the operation specified in the standards. That is, itsuffices to design a circuit to perform the operation complying with theDRAM standards in the first operation mode and perform the operation ofthe fourth embodiment mentioned above in the second operation mode. Thefirst operation mode is as already explained.

In the first operation mode, the input buffer circuit 71 is always keptin an inactive state during the period when the semiconductor device hasentered the self-refresh mode. Accordingly, the controller does notsupply the external clock signals CK and CKB. This enables reduction inpower consumption of the system. In the first operation mode, theexternal clock signals OK and CKB are not supplied to the semiconductordevice and thus the DLL circuit 200 is also kept in an inactive state.Accordingly, power consumption during the period when the semiconductordevice has entered the self-refresh mode in the first operation mode isreduced more than in that in the second operation mode. Because theinput buffer circuit 72 a is inactivated during the period when thesemiconductor device has entered the self-refresh mode, the impedancecontrol signal OPT cannot be input during this period. This means that,in a system that commonly uses data terminals of a plurality ofsemiconductor devices (that is, a configuration in which the dataterminals of the semiconductor devices are commonly connected to a databus of the system), when a controller causes one of the semiconductordevices to enter the self-refresh mode, for example, an impedance of thedata terminal thereof cannot be adjusted and thus the write command WTcannot be issued to the other semiconductor device. This is becauseprevention of data reflection is essential in a system to which highfrequency data are transferred. On the other hand, in a power-down mode,impedance adjustment of the data terminal can be performed during thatperiod. Therefore, in this case, the controller selects the power-downmode in the first operation mode, instead of the self-refresh mode inwhich power consumption is low. From this viewpoint, accordingly,impedance adjustment of the data terminal can be performed during theself-refresh mode is desirable.

An information processing system according to an embodiment of thepresent invention is explained next.

Turning to FIG. 22, the information processing system has aconfiguration in which one controller 50 and one semiconductor device(DRAM) 10 are used and are connected with each other. The controller 50supplies the address signal ADD, the command signal CMD, the externalclock signals CK and CKB, the clock enable signal CKE, and the impedancecontrol signal CDT to the semiconductor device 10. The controller 50sets the semiconductor device 10 to the first or second operation mode.When having set the semiconductor device 10 to the first operation mode,the controller 50 issues the command signal CMD and the like accordingto the DRAM standards. On the other hand, when having set thesemiconductor device 10 to the second operation mode, the controller 50issues the command signal CMD and the like at a timing not compliantwith the DRAM standards, thereby realizing the operations explained inthe first to fourth embodiments.

Selection of an operation mode can be performed by setting the operationmode in a mode register 27 included in the semiconductor device 10.Setting to the mode register 27 is performed by a method of issuing amode-register set command (MRS) and inputting an operation mode to beset through the address terminal 21. According to this method, the firstor second operation mode is selected at the time of initialization ofthe semiconductor device 10.

However, selection of an operation mode is not limited thereto and thefirst or second operation mode can be selected by a so-called on-the-flymethod. That is, an additional signal that specifies the first or secondoperation mode can be issued using the address terminal 21 or the dataterminal 31 when the self-refresh command SRE is issued, therebyselecting the first or second operation mode each time the semiconductordevice enters the self-refresh mode.

Turning to FIG. 23, two semiconductor devices (DRAMs) 10 a and 10 b areconnected to one controller 50. The address signal ADD, the commandsignal CMD, the external clock signals CK and CKB from the controller 50are commonly supplied to the two semiconductor devices 10 a and 10 b.The data terminals 31 of the semiconductor devices 10 a and 10 b arealso commonly connected to the controller 50. On the other hand, theclock enable signal CKE and the impedance control signal ODT areseparately supplied to the semiconductor devices 10 a and 10 b. That is,a clock enable signal CKE0 and an impedance control signal ODT0 aresupplied to the semiconductor device 10 a and a clock enable signal CKE1and an impedance control signal ODT1 are supplied to the semiconductordevice 10 b. Selection of the semiconductor device 10 a or 10 b isperformed by a chip select signal CS0 or CS1. That is, the commandsignal CMD or the like issued from the controller 50 becomes valid onlyfor the semiconductor device 10 a or 10 b to which the chip selectsignal is activated.

Turning to FIG. 24, the dual-die package DDP having a configuration inwhich the two semiconductor devices 10 a and 10 b are stacked on apackage substrate 300 is shown. Between the semiconductor devices 10 aand 10 b and between the semiconductor device 10 b and the packagesubstrate 300, an adhesive 301 is interposed, which fixes thesemiconductor devices 10 a and 10 b and the semiconductor device 10 band the package substrate 300 to each other. The semiconductor devices10 a and 10 b and the package substrate 300 are connected with a bondingwire 302, which electrically connects the semiconductor devices 10 a and10 b to external terminals 303 through an internal wire (not shown)provided in the package substrate 300. A sealing resin 304 is providedon the package substrate 300 to protect the semiconductor devices 10 aand 10 b and the bonding wire 302.

Turning to FIG. 26, the external terminals 303 are laid out in a matrixon the dual-die packaged DDP. Among these terminals, those related tothe address signal ADD, the command signal CMD, the external clocksignals CK and CKB, and data DQ are provided commonly for thesemiconductor devices 10 a and 10 b. On the other hand, those related tothe clock enable signal CKE, the impedance control signal CDT, and thechip select signal CS are provided separately for the semiconductordevices 10 a and 10 b. Therefore, even when only one of thesemiconductor devices 10 a and 10 b has entered the self-refresh mode,the external clock signals CK and CKB are continuously supplied to bothof the semiconductor devices 10 a and 10 b. Accordingly, it can be saidthat this configuration has high compatibility with the third embodimentmentioned above.

For example, when the semiconductor device 10 a has entered theself-refresh mode and the semiconductor device 10 b has not entered theself-refresh mode, the DLL circuit 200 and the input buffer circuit 71of the semiconductor device 10 a are intermittently activated during theself-refresh mode by utilizing the external clock signals CK and CKBcontinuously supplied also to the semiconductor device 10 a, so that thelocked state of the DLL, circuit 200 can be maintained. Because input ofthe impedance control signal ODT is possible even in the self-refreshmode in the first to fourth embodiment, the impedance control signalODT0 or ODT1 can be set to a high level, thereby performing an impedancecontrol of the output buffer circuit 30 a, even when both of thesemiconductor devices 10 a and 10 b have entered the self-refresh mode.

Turning to FIG. 26, two DIMMs (Dual Inline Memory Modules) 401 and 402are connected to one controller 50. For example, 16 semiconductordevices (DRAMs) 10 are mounted on each of the DIMMs 401 and 402. Each ofthe DIMMs 401 and 402 has a two-rank configuration and accordingly thereare four ranks in total. One rank is composed of eight semiconductordevices 10, for example, which are arranged on one of surfaces of amodule substrate although not particularly limited thereto. A rank isexclusively selected by chip select signals CS0 to CS3.

The address signal ADD and the command signal CMD from the controller 50are supplied to each of the DIMMs 401 and 402. On the other hand, theexternal clock signals CK and CKB are supplied to each rank. The dataterminals 31 are commonly supplied to the controller 50 in the fourranks.

Turning to FIGS. 27A to 27C, when a write operation is performed for theDIMM 401, one of the ranks (the rank 1 in FIG. 27A) in the DIMM 401 isterminated to 120 ohms (Ω) and one of the ranks (the rank 2 in FIG. 27A)in the DIMM 402 is terminated to 30Ω as shown in FIG. 27A. When a writeoperation is performed for the DIMM 402, one of the ranks (the rank 2 inFIG. 27B) in the DIMM 401 is terminated to 30Ω and one of the ranks (therank 1 in FIG. 27A) in the DIMM 402 is terminated to 120Ω as shown inFIG. 275.

As shown in FIG. 27C, when a read operation is performed for the DIMM401, one of the ranks (the rank 2 in FIG. 270) in the DIMM 402 isterminated to 30Ω. When a read operation is performed for the DIMM 402,one of the ranks (the rank 2 in FIG. 27D) in the DIMM 401 is terminatedto 30Ω as shown in FIG. 27D.

In this example, even when one of the DIMMs 401 and 402 is to beaccessed, the other one of the DIMMs 401 and 402 needs to be functionedas a terminating resistor. Such a control is particularly required whenan operating frequency is high. When this control is required, ranksthat do not need to be accessed can be entered into the self-refreshmode in which power consumption is much lower than in the power-downmode by using the semiconductor device according to the first to fourthembodiments. That is, in the semiconductor device according to the firstto fourth embodiments, the impedance control signal OPT can be inputeven when the semiconductor devices has entered the self-refresh modeand thus a desired terminating resistance can be obtained by outputtingthe impedance control signal OPT from the controller 50 in synchronismwith a read operation or a write operation for another rank.

It is apparent that the present invention is not limited to the aboveembodiments, but may be modified and changed without departing from thescope and spirit of the invention.

For example, while the number of memory cells to be refreshed inresponse to the self-refresh command SRE is a quarter of that of memorycells to be refreshed in response to the auto-refresh command REF in theabove embodiments, the present invention is not limited thereto.

Furthermore, a PLL circuit can be used instead of the DLL circuit. Thecontroller 50 can have functions other than that of controlling amemory.

The technical concept of the present invention can be applied to asemiconductor device having various functional chips, a controllerthereof, and a system thereof. Furthermore, the configuration of eachcircuit disclosed in the drawings is not limited to the circuit formdisclosed in the above embodiments.

The technical concept of the system of the present invention may beapplied to various semiconductor devices. For example, the presentinvention can be applied to a general system including a CPU (CentralProcessing Unit), an MCU (Micro Control Unit) a DSP (Digital SignalProcessor), an ASIC (Application Specific Integrated Circuit), and anASSP (Application Specific Standard Product), a Memory and the like. AnSOC (System on Chip), an MCP (Multi Chip Package), and a POP (Package onPackage) and so on, and a module on which they are applied are pointedto as examples of types of system to which the present invention isapplied. The present invention can be applied to the system that hasthese arbitrary product form and package form.

When the transistors are field effect transistors (FETs), various FETsare applicable, including MIS (Metal Insulator Semiconductor) and TFT(Thin Film Transistor) as well as MOS (Metal Oxide Semiconductor). Thedevice may even include bipolar transistors.

In addition, an NMOS transistor (N-channel MOS transistor) is arepresentative example of a first conductive transistor, and a PMOStransistor (P-channel MOS transistor) is a representative example of asecond conductive transistor.

Many combinations and selections of various constituent elementsdisclosed in this specification can be made within the scope of theappended claims of the present invention. That is, it is needles tomention that the present invention embraces the entire disclosure ofthis specification including the claims, as well as various changes andmodifications which can be made by those skilled in the art based on thetechnical concept of the invention.

In addition, while not specifically claimed in the claim section, theapplicant reserves the right to include in the claim section of theapplication at any appropriate time the following controllers, controlmethods thereof, control methods of an information processing system,and semiconductor devices:

A1. A controller comprising:

a command issuing unit that issues commands to a semiconductor devicehaving a self-refresh mode in which a refresh operation of storage datain memory cell array is performed; and

a data processor that processes the storage data transmitted to orreceived from the semiconductor device through a data terminal includedtherein, wherein

the command issuing unit comprises:

-   -   an impedance control command issuing unit that issues an        impedance control command to control an impedance of the data        terminal; and    -   a sub-command issuing unit that issues a self-refresh command        that causes the semiconductor device to enter the self-refresh        mode, a self-refresh exit command that causes the semiconductor        device to exit the self-refresh mode, and an auto-refresh        command that causes the semiconductor device to perform the        refresh operation, and

the impedance control command issuing unit issues the impedance controlcommand to the semiconductor device while the semiconductor device is inthe self-refresh mode so that the semiconductor device controls animpedance of the data terminal during the self-refresh mode.

A2. The controller as A1, further comprising a clock issuing unit thatissues a clock signal having a predetermined frequency,

wherein the impedance control command issuing unit sues the impedancecontrol command to the semiconductor device asynchronously with theclock signal while the semiconductor device is in the self-refresh mode.

A3. The controller as A2, wherein the impedance control command issuingunit issues the impedance, control command to the semiconductor devicesynchronously with the clock signal while the semiconductor device is inother than the self-refresh mode.

A4. The controller as any one of A1 to A3, further comprising a clockissuing unit that issues a clock signal having a predeterminedfrequency,

wherein the clock issuing unit issues the clock signal to first andsecond semiconductor devices in common.

A5. The controller as any one of A1 to A3, wherein the impedance controlcommand issuing unit issues the impedance control command to first andsecond semiconductor devices in common.

A6. The controller as any one of A1 to A3, further comprising a clockissuing unit that issues first and second clock signals having apredetermined frequency, wherein

the clock issuing unit selectively issues the first clock signal to afirst semiconductor device,

the clock issuing unit selectively issues the second clock signal to asecond semiconductor device,

the impedance control command issuing unit selectively issues a firstimpedance control command to the first semiconductor device, and

the impedance control command issuing unit selectively issues a secondimpedance control command to the second semiconductor device.

A7. The controller as any one of A1 to A6, wherein

the impedance control command issuing unit, in a first operation mode,does not issue the impedance control command to the semiconductor devicewhile the semiconductor device is in the self-refresh mode, and

the impedance control command issuing unit, in a second operation mode,issues the impedance control command to the semiconductor device whilethe semiconductor device is in the self-refresh mode.

A8. The controller as any one of A1 to A6, further comprising a clockissuing unit that issues a clock signal having a predeterminedfrequency, wherein

the clock issuing unit, in a first operation mode, stops issuing theclock signal or changes a frequency thereof while the semiconductordevice is in the self-refresh mode, and

the clock issuing unit, in a second operation mode, continuously issuesthe clock signal having the predetermined frequency without stopping theclock signal while the semiconductor device is in the self-refresh mode.

A9. The controller as any one of A1 to A8, wherein

the command issuing unit further issues a first command that causes thesemiconductor device to perform an access operation to the memory cellarray, and a second command that causes the semiconductor device tooutput the storage data through the data terminal,

the command issuing unit issues the second command or the impedancecontrol command after elapse of a first period at earliest from issuingthe self-refresh exit command in a first operation mode, and

the command issuing unit issues the second command or the impedancecontrol command after elapse of a second period that is shorter than thefirst period at earliest from issuing the self-refresh exit command in asecond operation mode.

A10. The controller as any one of A1 to A9, wherein

the sub-command issuing unit further issues a first command that causesthe semiconductor device to perform an access operation to the memorycell array, and a second command that causes the semiconductor device tooutput the storage data through the data terminal,

the sub-command issuing unit issues the first command after elapse of athird period at earliest from issuing the self-refresh exit command in afirst operation mode, and

the sub-command issuing unit issues the first command after elapse of afourth period that is shorter than the third period at earliest fromissuing the self-refresh exit command in a second operation mode.

A11. The controller as any one of A1 to A10, wherein a number of theself-refresh commands issued in each unit period is substantially thesame as a number of the auto-refresh commands issued in the each unitperiod.

A12. The controller as any one of A1 to A11, wherein an interval ofissuing the self-refresh commands is substantially the same as that ofthe auto-refresh commands.

A13. The controller as A11 to A12, wherein

the sub-command issuing unit further issues a power-down command thatcauses the semiconductor device to enter a power-down mode in which thesemiconductor device reduces a power consumption thereof, a power-downexit command that causes the semiconductor device to exit the power-downmode, a first command that causes the semiconductor device to perform anaccess operation to the storage data in the memory cell array, and asecond command that causes the semiconductor device to output thestorage data through the data terminal,

a minimum interval from issuing the self-refresh exit command to issuingthe first command is substantially the same as a minimum interval fromissuing the power-down exit command to issuing the first command, and

a minimum interval from issuing the self-refresh exit command to issuingthe second command is substantially the same as a minimum interval fromissuing the power-down exit command to issuing the second command.

A14. The controller as any one of A1 to A3, further comprising a clockissuing unit that issues a clock signal having a predeterminedfrequency,

wherein the clock issuing unit stops issuing the clock signal or changesa frequency thereof while the semiconductor device is in theself-refresh mode.

A15. The controller as any one of A7 to A10, wherein the command issuingunit further issues a mode-register set command that brings thesemiconductor device into the first or second operation mode.

A16. The controller as any one of A7 to A10, wherein the command furtherissues an additional signal that brings the semiconductor device intothe first or second operation mode along with the self-refresh command.

A17. The controller as A16, further comprising an address processor thatspecifies an address of the storage data,

wherein the address processor issues the additional signal.

A18. A control method of a controller, the method comprising:

issuing a self-refresh command that causes a semiconductor device toenter a self-refresh mode in which a refresh operation on memory cellsincluded in a memory cell array of the semiconductor device isperformed;

issuing a self-refresh exit command that causes the semiconductor deviceto exit the self-refresh mode;

issuing an auto-refresh command that causes the semiconductor device toperform the refresh operation on the memory cells; and

issuing an impedance control command to control an impedance of a dataterminal of the semiconductor device through which storage data in thememory cell array is output while the semiconductor device is in theself-refresh mode.

A19. The control method of the controller as A18, the method furthercomprising issuing an external clock signal having a predeterminedfrequency to the semiconductor device,

wherein the controller issues the impedance control command to thesemiconductor device asynchronously with the external clock signal whilethe semiconductor device is in the self-refresh mode.

A20. The control method of the controller as A19, wherein the controllerissues the impedance control command to the semiconductor devicesynchronously with the external clock signal while the semiconductordevice is in other than the self-refresh mode.

A21. The control method of the controller as any one of A18 to A20, themethod further comprising setting the semiconductor device in first orsecond operation mode, wherein

the controller issues an external clock signal having a predeterminedfrequency to the semiconductor device while the semiconductor device isin other than the self-refresh mode,

the controller, in the first operation mode, stops issuing the externalclock signal or changes a frequency thereof while the semiconductordevice is in the self-refresh mode, and

the controller, in the second operation mode, continuously issues theexternal clock signal having the predetermined frequency withoutstopping the external clock signal even while the semiconductor deviceis in the self-refresh mode.

A22. The control method of the controller as any one of A18 to A21, themethod further comprising:

setting the semiconductor device in first or second operation mode;

issuing a first command that causes the semiconductor device to performan access operation to the memory cell array; and

issuing a second command that causes the semiconductor device to outputthe storage data through the data terminal, wherein

the controller issues the second command or the impedance controlcommand after elapse of a first period at earliest from issuing theself-refresh exit command in the first operation mode, and

the controller issues the second command or the impedance controlcommand after elapse of a second period that is shorter than the firstperiod at earliest from issuing the self-refresh exit command in thesecond operation mode.

A23. The control method of the controller as any one of A18 to A20, themethod further comprising:

setting the semiconductor device in first or second operation mode;

issuing a first command that causes the semiconductor device to performan access operation to the memory cell array; and

issuing a second command that causes the semiconductor device to outputthe storage data through the data terminal, wherein

the controller issues the first command after elapse of a third periodat earliest from issuing the self-refresh exit command in the firstoperation mode, and

the controller issues the first command after elapse of a fourth periodthat is shorter than the third period at earliest from issuing theself-refresh exit command in the second operation mode.

A24. The control method of the controller as any one of A18 to A23, themethod further comprising:

issuing a power-down command that causes the semiconductor device toenter a power-down mode in which the semiconductor device reduces apower consumption thereof;

issuing a power-down exit command that causes the semiconductor deviceto exit the power-down mode; and

issuing a first command that causes the semiconductor device to performan access operation to storage data in the memory cell array, wherein

the controller issues the first command to the semiconductor deviceafter elapse of a fifth period at earliest from issuing the power-downexit command, and

the controller issues the first command to the semiconductor deviceafter elapse of a sixth period that is substantially the same timelength as the fifth period at earliest from issuing the self-refreshexit command.

A25. The control method of the controller as A24, wherein an interval ofissuing the self-refresh commands is substantially the same as that ofthe auto-refresh commands.

A26. A control method of an information processing system having acontroller and a semiconductor device, the method comprising:

issuing, from the controller to the semiconductor device, a self-refreshcommand, a self-refresh exit command, an auto-refresh command, and animpedance control command;

entering a self-refresh mode in which a refresh operation on memorycells included in a memory cell array of the semiconductor device isperformed in response to the self refresh command;

exiting the self-refresh mode in response to the self-refresh exitcommand;

performing a refresh operation on the memory cells in response to theauto-refresh command; and

controlling an impedance of a data terminal through which storage datain the memory cell array is output,

wherein the controller issues the impedance control command to thesemiconductor device while the semiconductor device is in theself-refresh mode.

A27. The control method of the information processing system as A26, themethod further comprising issuing an external clock signal having apredetermined frequency from the controller to the semiconductor device,

wherein the semiconductor device performs the refresh operationasynchronously with the external clock signal in response to theimpedance control command while the semiconductor device is in theself-refresh mode.

A28. The control method of the information processing system as A27,wherein

wherein the controller issues the impedance control command to thesemiconductor device while the semiconductor device is in other than theself-refresh mode, and

the semiconductor device performs the refresh operation synchronouslywith the external clock signal in response to the impedance controlcommand while the semiconductor device is in other than the self-refreshmode.

A29. The control method of the information processing system as any oneof A26 to A28, the method further comprising:

issuing an external clock signal having a predetermined frequency fromthe controller to the semiconductor device; and

setting the semiconductor device in first or second operation mode,wherein

the controller, in the first operation mode, stops issuing the externalclock signal or changes a frequency thereof while the semiconductordevice is in the self-refresh mode, and

the controller, in the second operation mode, continuously issues theexternal clock signal having the predetermined frequency withoutstopping the external clock signal even while the semiconductor deviceis in the self-refresh mode.

A30. The control method of the information processing system as anyoneof A26 to A29, the method further comprising:

setting the semiconductor device in first or second operation mode;

issuing a first command from the controller to the semiconductor devicethat causes the semiconductor device to perform an access operation tothe memory cell array; and

issuing a second command from the controller to the semiconductor devicethat causes the semiconductor device to output the storage data throughthe data terminal, wherein

the controller issues the second command or the impedance controlcommand to the semiconductor device after elapse of a first period atearliest from issuing the self-refresh exit command in the firstoperation mode,

the controller issues the second command or the impedance controlcommand to the semiconductor device after elapse of a second period thatis shorter than the first period at earliest from issuing theself-refresh exit command in the second operation mode, and

the semiconductor device output the storage data through the dataterminal to the controller in response to the second command.

A31. The control method of the information processing system as anyoneof A26 to A30, the method further comprising:

setting the semiconductor device in first or second operation mode;

issuing a first command from the controller to the semiconductor devicethat causes the semiconductor device to perform an access operation tothe memory cell array; and

issuing a second command from the controller to the semiconductor devicethat causes the semiconductor device to output the storage data throughthe data terminal, wherein

the controller issues the first command to the semiconductor deviceafter elapse of a third period at earliest from issuing the self-refreshexit command in the first operation mode,

the controller issues the first command to the semiconductor deviceafter elapse of a fourth period that is shorter than the third period atearliest from issuing the self-refresh exit command in the secondoperation mode, and

the semiconductor device performs the access operation to the memorycell array in response to the first command.

A32. The control method of the information processing system as any oneof A26 to A30, the method further comprising:

issuing a power-down command from the controller to the semiconductordevice that causes the semiconductor device to enter a power-down modein which the semiconductor device reduces a power consumption thereofwithout performing the refresh operation;

issuing a power-down exit command from the controller to thesemiconductor device that causes the semiconductor device to exit thepower-down mode; and

issuing a first command from the controller to the semiconductor devicethat causes the semiconductor device to perform an access operation tostorage data in the memory cell array, wherein

the controller issues the first command to the semiconductor deviceafter elapse of a fifth period at earliest from issuing the power-downexit command, and

the controller issues the first command to the semiconductor deviceafter elapse of a sixth period that is substantially the same timelength as the fifth period at earliest from issuing the self-refreshexit command.

A33. The control method of the information processing system as A32,wherein an interval of issuing the self-refresh commands issubstantially the same as that of the auto-refresh commands.

A34. The control method of the information processing system as any oneof A26 to A30, the method further comprising issuing an external clocksignal having a predetermined frequency from the controller to thesemiconductor device during the self-refresh mode,

wherein the semiconductor device intermittently activates a first inputbuffer circuit supplied with the external clock signal and a DLL circuitthat generates an internal clock signal based on an output signal of thefirst input buffer circuit in conjunction with each other while thesemiconductor device is in the self-refresh mode.

A35. The control method of the information processing system as A34,wherein the semiconductor device intermittently activates the DLLcircuit to update and retain information related to a delay amount ofthe DLL circuit.

A36. The control method of the information processing system as any oneof A26 to A28, wherein

the semiconductor device performs the refresh operation on n memorycells included in the memory cell array in response to the auto-refreshcommand, and

the semiconductor device periodically performs the refresh operation onm memory cells included in the memory cell array while changingaddresses for each first cycle during the self-refresh modeasynchronously with an external clock signal having a predeterminedfrequency, where m is smaller than n.

A37. The control method of the information processing system as A36,wherein

the controller setting the semiconductor device to a first or secondoperation mode,

the semiconductor device periodically performs the refresh operation onthe n memory cells while changing addresses for each second cycle thatis longer than the first cycle asynchronous with the external clocksignal, in the first operation mode, and

the semiconductor device periodically performs the refresh operation onthe m memory cells while changing addresses for each first cycleasynchronous with the external clock signal, in the second operationmode.

A38. The control method of the information processing system as any oneof A26 to A28, the method further comprising issuing an external clocksignal having a predetermined frequency from the controller to thesemiconductor device during the self-refresh mode, wherein

the semiconductor device performs the refresh operation on n memorycells included in the memory cell array in a first period in response tothe auto-refresh command,

the semiconductor device performs the refresh operation on the n memorycells in the first period and enters the self-refresh mode in responseto a self-refresh command, and

the semiconductor device temporarily activates a DLL circuit thatgenerates an internal clock signal that is phase-controlled based on theexternal clock signal to update and retain information related to adelay amount of the DLL circuit in connection with the self-refreshmode.

A39. The control method of the information processing system as any oneof A26 to A28, wherein the semiconductor device temporarily activates aDLL circuit that generates an internal clock signal that isphase-controlled based on an external clock signal in response to theself-refresh command or the self-refresh exit command.

A40. The control method of the information processing system as A39, themethod further comprising setting the semiconductor device in first orsecond operation mode, wherein

the controller, in the first operation mode, does not issue the externalclock signal to the semiconductor device during the self-refresh mode,

the controller, in the second operation mode, issues the external clocksignal to the semiconductor device during the self-refresh mode,

the semiconductor device, in the first operation mode, repeatedlyperforms the refresh operation on n memory cells in a first periodduring the self-refresh mode, and

the semiconductor device, in the second operation mode, performs therefresh operation once in response to the self refresh command.

A41. The control method of the information processing system as A40,wherein

the semiconductor device, in the first operation mode, inactivating theDLL circuit during the self-refresh mode, and activating the DLL circuitin response to the self-refresh exit command with resetting theinformation, and

the access control circuit, in the second operation mode, retaining theinformation without resetting in response to the self-refresh command,and activates the DLL circuit and updates the information in response tothe self-refresh exit command.

A42. A semiconductor device comprising:

a first input buffer circuit to which an external clock signal having apredetermined frequency is supplied from outside;

a DLL circuit that generates an internal clock signal that isphase-controlled based on an output signal from the first input buffercircuit;

a memory cell array that has a plurality of memory cells requiring anrefresh operation in order to retain of storage data therein;

an output buffer circuit that outputs the storage data read from thememory cell array to outside through a data terminal synchronously withthe internal clock signal;

a second input buffer circuit supplied with an impedance control commandfrom outside; and

an access control circuit, wherein

the access control circuit enters a self-refresh mode in which therefresh operation is performed in response to a self-refresh command,

the access control circuit performs the refresh operation in response toan auto-refresh command,

the access control circuit exits the self-refresh mode in response to aself-refresh exit command, and

the access control circuit controls an impedance of the data terminal inresponse to the impedance control command during the self-refresh mode.

A43. The semiconductor device as A42, wherein the access control circuitcontrols an impedance of the data terminal asynchronously with theinternal clock signal or the external clock signal when the impedancecontrol command is issued while the semiconductor device is in theself-refresh mode.

A44. The semiconductor device as A42 or A43, wherein the access controlcircuit controls an impedance of the data terminal synchronously withthe internal clock signal or the external clock signal when theimpedance control command is issued while the semiconductor device is inother than the self-refresh mode.

A45. The semiconductor device as any one of A42 to A44, furthercomprising a latch circuit that latches an output signal of the secondinput buffer circuit synchronously with an output signal of the firstinput buffer circuit,

wherein the latch circuit is bypassed during the self-refresh mode.

A46. The semiconductor device as A45, further comprising a switchcircuit having a first input node supplied with an output signal of thelatch circuit, a second input node supplied with the output signal ofthe second input buffer circuit, and output node connected to one of thefirst and second input nodes,

wherein the output node is connected to the second input node during theself-refresh mode.

A47. The semiconductor device as A46, wherein the output node isconnected to the first input node during other than the self-refreshmode.

A48. The semiconductor device as anyone of A42 or A47, wherein

the access control circuit, in a first operation mode, inactivates thesecond input buffer circuit during the self-refresh mode, and

the access control circuit, in a second operation mode, activates thesecond input buffer circuit during the self-refresh mode.

A49. The semiconductor device as A48, further comprising a latch circuitthat latches an output signal of the second input buffer circuitsynchronously with an output signal of the first input buffer circuit,

wherein the latch circuit is bypassed during the self-refresh mode.

A50. The semiconductor device as any one of A42 to A49, wherein

the access control circuit repeatedly performs the refresh operationasynchronously with the external clock signal during the self-refreshmode, and

the access control circuit intermittently activates the first inputbuffer circuit and the DLL circuit in conjunction with each other duringthe self-refresh mode.

A51. The semiconductor device as any one of A42 to A50, wherein

the access control circuit performs the refresh operation on n memorycells included in the memory cell array in response to the auto-refreshcommand, and

the access control circuit periodically performs the refresh operationon m memory cells included in the memory cell array while changingaddresses for each first cycle during the self-refresh mode, where m issmaller than n.

A52. The semiconductor device as any one of A42 to A49, wherein

the access control circuit performs the refresh operation on n memorycells included in the memory cell array in a first period in response tothe auto-refresh command,

the access control circuit performs the refresh operation on the nmemory cells in the first period and enters the self-refresh mode inresponse to a self-refresh command, and

the access control circuit temporarily activates the DLL circuit toupdate and retain information related to a delay amount of the DLLcircuit in connection with the self-refresh mode.

A53. The semiconductor device as any one of A42 to A49, wherein theaccess control circuit inactivates the first input buffer circuit whilethe semiconductor device is in the self-refresh mode.

A54. The semiconductor device as A53, wherein the access control circuitactivates the second input buffer circuit whether the semiconductordevice is in the self-refresh mode or not.

A55. The semiconductor device as A48 or A49, wherein the semiconductordevice is set to the first or second operation mode according to amode-register set command supplied from outside.

A56. The semiconductor device as A48 or A49, wherein the semiconductordevice is set to the first or second operation mode according to anadditional signal supplied from outside along with the self-refreshcommand.

What is claimed is:
 1. A method for controlling termination impedance ofa data terminal in a dynamic random access memory device, said methodcomprising: receiving a mode register set command to set an operationmode to a first mode; setting the operation mode in a mode register tothe first mode; receiving a self-refresh entry command; enteringself-refresh mode; activating a first input buffer connected to atermination impedance control terminal; and receiving an impedancecontrol signal at the first buffer, wherein the termination impedance ofthe data terminal is set to a first impedance value if the terminationimpedance control signal has a first level and the termination impedanceof the data terminal is set to a second impedance value if thetermination impedance control signal has a second level.
 2. The methodas claimed in claim 1 wherein the second impedance value is off.
 3. Themethod as claimed in claim 2 wherein the first impedance value is in arange of 30Ω to 120Ω.
 4. The method as claimed in claim 1 wherein thefirst level is a high level and the second level is a low level.
 5. Themethod as claimed in claim 1 wherein the operation mode is receivedthrough an address terminal.
 6. The method as claimed in claim 1 whereinthe self-refresh entry command is received through a command terminaland a clock enable terminal.
 7. The method as claimed in claim 1 whereinthe mode register set command and the self-refresh entry command arereceived synchronously with a clock signal received by a clock inputbuffer connected to a clock terminal.
 8. The method as claimed in claim7 wherein the clock input buffer is deactivated after enteringself-refresh mode.
 9. The method as claimed in claim 1 furthercomprising: receiving a self-refresh exit command; exiting self-refreshmode; receiving a mode register set command indicative of a secondoperation mode; setting the operation mode in a mode register to thesecond mode; receiving a self-refresh entry command; enteringself-refresh mode; and deactivating the first input buffer, wherein thetermination impedance of the data terminal is set to off.
 10. The methodas claimed in claim 9 wherein the self-refresh exit command is receivedthrough a clock enable terminal.